2021
DOI: 10.1016/j.cap.2021.08.014
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Recent progress on two-dimensional neuromorphic devices and artificial neural network

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Cited by 29 publications
(18 citation statements)
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“…Depending on the material’s underlying characteristics, this raises the possibility for spatially selective and tunable magnetism, long-lived interlayer excitons, ferroelectricity, and integrated quantum photonics . Finally, if the transport properties are modulated across large ranges comparable to the PL observed herein, laser-written p–n junctions, neuromorphic computing schemes, , and multistate optoelectronic devices could also be possible.…”
Section: Discussionmentioning
confidence: 90%
“…Depending on the material’s underlying characteristics, this raises the possibility for spatially selective and tunable magnetism, long-lived interlayer excitons, ferroelectricity, and integrated quantum photonics . Finally, if the transport properties are modulated across large ranges comparable to the PL observed herein, laser-written p–n junctions, neuromorphic computing schemes, , and multistate optoelectronic devices could also be possible.…”
Section: Discussionmentioning
confidence: 90%
“…chemical vapor deposition, CVD), and most of the 2D materials in these devices are mechanically exfoliated with random thickness and shape distribution, which will inevitably cause large device-to-device variations. Therefore, most of the synaptic devices based on 2D materials are not suitable for large-scale device arrays for hardware artificial neural networks [ 236 ]. Furthermore, organic-inorganic hybrid semiconductors such as organolead halide perovskites have been widely used as light absorption channels for neuromorphic heterojunction transistors, leading to weaker stability and environmental issues [ 35 , 237 , 238 ].…”
Section: Problems Challenges and Prospects For Future Developmentmentioning
confidence: 99%
“…However, as the traditional FETs shrink in size, the short-channel effect becomes more pronounced, where the gate electric field cannot perform the full effect, resulting in leakage currents that affect the performance of the FET. To address these issues, FETs based on 2D materials have been extensively studied because of their ability to reduce the short-channel effects due to the atomic thickness [66,[102][103][104]. In addition, the coupling between the triboelectric potential and electrical behavior in semiconductor materials enables the unprecedented device properties [105][106][107].…”
Section: Logic Devices Based On 2d Tribotronic Transistorsmentioning
confidence: 99%