Recent progress of minimal voltage losses for high-performance perovskite photovoltaics

Zhang, Chengxi; Lu, Yan-Na; Wu, Wu‐Qiang; Wang, Luyao

doi:10.1016/j.nanoen.2020.105634

Cited by 56 publications

(49 citation statements)

References 70 publications

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“…The highest occupied molecular orbital (HOMO) level of Cs 3 TbCl 6 QDs modified perovskite locates at around −5.27 eV, slightly lower than that of Spiro-OMeTAD (−5.22 eV) and higher than the control perovskite film (−5.31 eV), which is conducive to the carrier extraction and transportation in PSCs. [13] The data supported by UPS measurements shown in Figures S2-S5, Supporting Information, suggesting the introduction of Cs 3 TbCl 6 QDs plays an important role in the bandgap alignment. [14] The introduction of BPQDs barely changes energy level positions of Spiro-OMeTAD and the function of interface passivation mainly originates from Cs 3 TbCl 6 QDs.…”

Section: Resultsmentioning

confidence: 76%

Dual Modification Engineering via Lanthanide‐Based Halide Quantum Dots and Black Phosphorus Enabled Efficient Perovskite Solar Cells with High Open‐Voltage of 1.235 V

Liu

Lyu

Zhou

et al. 2022

Adv Funct Materials

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Interfacial engineering is one of the most effective means to improve the photoelectric conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). In this work, Ln3+‐based halide Cs3TbCl6 quantum dots (QDs) are synthesized through a modified hot‐injection method, which displays an excitonic emission centered at 431 nm and the characteristic emission peaks of Tb3+ ions. Then, the Ln3+‐based halide Cs3TbCl6 QDs are introduced to the interface of Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 perovskite films in the PSCs, which can regulate the energy levels, fill the grain boundaries and remove the ionic defects. Surprisingly, the Cs3TbCl6 QDs modified devices achieve a champion PCE of 22.89% with a super high open‐voltage of 1.235 V. The high open‐voltage can be mainly attributed to the better bandgap alignment, enhanced interface, and reduced defects density. Afterward, the hole transport layer (HTL) is modified by the black phosphorus QDs (BPQDs), yielding a champion PCE of 23.49% and a filling factor of 80.32%. The Cs3TbCl6 QDs modified unencapsulated device possesses well environmental stability and humidity stability. This work demonstrates a new kind of Ln3+‐based metal QDs and explores a new approach to fabricate the PSCs with high open‐voltage, high efficiency, and good stability through the QD‐based passivation techniques.

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Section: Resultsmentioning

confidence: 76%

Dual Modification Engineering via Lanthanide‐Based Halide Quantum Dots and Black Phosphorus Enabled Efficient Perovskite Solar Cells with High Open‐Voltage of 1.235 V

Liu

Lyu

Zhou

et al. 2022

Adv Funct Materials

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“…With the rise of annealing temperature, the (220) and ( 224) planes show a slight shi to higher angles, which may be attributed to the presence of residual stress in perovskite grains. [26][27][28] SEM was carried out to further prove the effect of postannealing temperature on the crystallinity of the perovskite lm. As can be seen from Fig.…”

Section: Resultsmentioning

confidence: 99%

Bandgap adjustment assisted preparation of >18% Cs_yFA_1−yPbI_xBr_3−x-based perovskite solar cells using a hybrid spraying process

Xiao

et al. 2021

RSC Adv.

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“…[ 10–13 ] Although various methods have been proposed to suppress phase segregation, the power conversion efficiencies (PCEs) of devices, especially those based on nickel oxide (NiO x ) as the hole layer, need to be further improved. [ 14–19 ]…”

Section: Introductionmentioning

confidence: 99%

“…[10][11][12][13] Although various methods have been proposed to suppress phase segregation, the power conversion efficiencies (PCEs) of devices, especially those based on nickel oxide (NiO x ) as the hole layer, need to be further improved. [14][15][16][17][18][19] NiO x nanoparticles (NPs-NiO x ) are potential candidates for wide-bandgap hole-harvesting layers in perovskite/silicon tandem solar cells because they are inexpensive, stable, and easily scaled up. [7,[20][21][22] However, organic polymers, such as…”

mentioning

confidence: 99%

CsPbCl₃‐Cluster‐Widened Bandgap and Inhibited Phase Segregation in a Wide‐Bandgap Perovskite and its Application to NiO_x‐Based Perovskite/Silicon Tandem Solar Cells

Chen

Ren

et al. 2022

Advanced Materials

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far the most widely studied for solar-cell applications in emerging photovoltaic (PV) technology. Wide-bandgap perovskites are attractive as top cells for tandem applications because they are cost-effective and have perfect optoelectronic properties and tunable bandgaps (1.64-1.72 eV). [1] Reducing thermalization losses by stacking wide-bandgap and narrow-bandgap (1.1 eV) absorbers can overcome the Shockley-Queisser efficiency limit of 33.7% for singlejunction cells. [2] Wide-bandgap perovskites used in perovskite/silicon tandem systems reported to date typically contain more than 20% Br, which leads to inevitable phase separation. [3][4][5][6][7][8][9] Many studies into single-junction solar cells have shown that the performance of a wide-bandgap mixed halide perovskite is limited by its relatively low photovoltage. [10][11][12][13] Although various methods have been proposed to suppress phase segregation, the power conversion efficiencies (PCEs) of devices, especially those based on nickel oxide (NiO x ) as the hole layer, need to be further improved. [14][15][16][17][18][19] NiO x nanoparticles (NPs-NiO x ) are potential candidates for wide-bandgap hole-harvesting layers in perovskite/silicon tandem solar cells because they are inexpensive, stable, and easily scaled up. [7,[20][21][22] However, organic polymers, such as Nickel oxide (NiO x ) is an attractive hole-transport material for efficient and stable p-i-n metal-halide perovskite solar cells (PSCs). However, an undesirable redox reaction occurs at theNiO x /perovskite interface, which results in a low open-circuit voltage (V OC ), instability, and phase separation of the NiO x -based wide-bandgap perovskite (Br > 20%). In order to simultaneously address the abovementioned phase separation problem and redox chemistry at the perovskite/NiO x interface, the bandgap is widened from 1.64 to 1.67 eV by adding inorganic CsPbCl 3 -clusters (3 mol%) to the Cs 22 Br 15 perovskite precursor solution. Moreover, adding extra 2 mol% CsCl enriches the NiO x /perovskite interface with Cl, thereby preventing the redox reaction at the interface, while controlling the Br content to within 15% improves the photostability of the wide-bandgap perovskite. Consequently, the power conversion efficiency (PCE) of a single-junction p-i-n PSC increases from 17.82% to 19.76%, which leads to the fabrication of highly efficient monolithic p-i-n-type NiO x -based perovskite/silicon tandem solar cells with PCEs of up to 27.26% (certified PCE: 27.15%). The perovskite to an n-i-p-type perovskite/ silicon tandem solar cell is also applied to deliver a V OC of 1.93 V and a final efficiency of 25.5%. These findings provide critical insight into the fabrication of highly efficient and stable wide-bandgap perovskites.

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Recent progress of minimal voltage losses for high-performance perovskite photovoltaics

Cited by 56 publications

References 70 publications

Dual Modification Engineering via Lanthanide‐Based Halide Quantum Dots and Black Phosphorus Enabled Efficient Perovskite Solar Cells with High Open‐Voltage of 1.235 V

Dual Modification Engineering via Lanthanide‐Based Halide Quantum Dots and Black Phosphorus Enabled Efficient Perovskite Solar Cells with High Open‐Voltage of 1.235 V

Bandgap adjustment assisted preparation of >18% Cs_yFA_1−yPbI_xBr_3−x-based perovskite solar cells using a hybrid spraying process

CsPbCl₃‐Cluster‐Widened Bandgap and Inhibited Phase Segregation in a Wide‐Bandgap Perovskite and its Application to NiO_x‐Based Perovskite/Silicon Tandem Solar Cells

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Recent progress of minimal voltage losses for high-performance perovskite photovoltaics

Cited by 56 publications

References 70 publications

Dual Modification Engineering via Lanthanide‐Based Halide Quantum Dots and Black Phosphorus Enabled Efficient Perovskite Solar Cells with High Open‐Voltage of 1.235 V

Dual Modification Engineering via Lanthanide‐Based Halide Quantum Dots and Black Phosphorus Enabled Efficient Perovskite Solar Cells with High Open‐Voltage of 1.235 V

Bandgap adjustment assisted preparation of >18% CsyFA1−yPbIxBr3−x-based perovskite solar cells using a hybrid spraying process

CsPbCl3‐Cluster‐Widened Bandgap and Inhibited Phase Segregation in a Wide‐Bandgap Perovskite and its Application to NiOx‐Based Perovskite/Silicon Tandem Solar Cells

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Bandgap adjustment assisted preparation of >18% Cs_yFA_1−yPbI_xBr_3−x-based perovskite solar cells using a hybrid spraying process

CsPbCl₃‐Cluster‐Widened Bandgap and Inhibited Phase Segregation in a Wide‐Bandgap Perovskite and its Application to NiO_x‐Based Perovskite/Silicon Tandem Solar Cells