Recent photoluminescence research on chalcogenide glasses for photonics applications

Kasap, S. O.; Koughia, K.; Munzar, M.; Tonchev, D.; Saitou, D.; Aoki, Takeshi

doi:10.1016/j.jnoncrysol.2006.10.060

Cited by 28 publications

(14 citation statements)

References 23 publications

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“…5. Developments in photonics applications of chalcogenide glasses have highlighted them as a matrixhost for rare-earth ions [7][8][9]. Bishop et al [12] demonstrated the so-called broad-band excitation, i.e., excitation of rare-earth ions, not directly, but through exciting the host chalcogenide glass having a broad Urbach-edge spectrum.…”

Section: Discussionmentioning

confidence: 99%

“…The photoluminescence (PL) spectrum of arsenic chalcogenides when excited by light with ħω ≈ E g (E g is an optical bandgap energy) lies at about half the optical gap, which means that PL undergoes a strong Stokes shift, and it appears as a broad Gaussianshaped spectrum with a peak energy E PL approximately at E PL ≈ E g /2 [3][4][5]. Developments in photonics applications highlighted the chalcogenide glass as a host for rare-earth ions [1,[6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence of As2S3 doped by Cr and Yb

Stronski¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoluminescence of As2S3 doped by Cr and Yb

Stronski¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Three compositional regions can be identified on the basis of the structural characteristics of these glasses. The glasses with compositions close to stoichiometry (35 e x + y e 43) consist primarily of a heteropolar-bonded As-S network of corner-shared AsS 3 pyramids. An increasing metal content results in an abrupt structural and topological transition at x + y ) 55, where the structure is found to be quasi-zero-dimensional, predominantly consisting of isolated As 4 S 3 molecules and possibly occasional Ge 2 As 6 S 7 dimers, held together presumably via weak van der Waals bonding.…”

Section: Discussionmentioning

confidence: 99%

Network vs Molecular Structural Characteristics of Ge-Doped Arsenic Sulfide Glasses: A Combined Neutron/X-ray Diffraction, Extended X-ray Absorption Fine Structure, and Raman Spectroscopic Study

2009

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Combined neutron/X-ray diffraction, Ge and As K-edge extended X-ray absorption fine structure analysis, and Raman spectroscopy are employed to study the compositional dependence of the short-and intermediaterange structures of As-rich Ge x As y S 100-x-y glasses with a constant Ge:As atomic ratio of 1:17.3. The structures of glasses with compositions near stoichiometry (35 e x + y e 43) are dominated by the presence of a predominantly heteropolar-bonded As 2 S 3 network. However, an increasing metal content (x + y ) 55) results in a novel glass consisting predominantly of As 4 S 3 molecules, held together by van der Waals forces. The formation of this "molecular" glass implies an apparently anomalous situation of near-zero connectivity and dimensionality with increasing average coordination number. A further increase in metal content (60 e x + y e 65) results in the formation of As-As homopolar-bonded structural regions that coexist with As 4 S 3 molecules. Such unusual evolution of intermediate-range order is shown to be closely related to the compositional variation of thermophysical properties and density fluctuation in these glasses. IntroductionChalcogenide glasses are of wide-ranging importance in a variety of technological applications in the areas of photonics and telecommunication. 1-6 The unique compositional flexibility of these glasses in the form of continuous alloying enables tuning of optical, electronic, thermomechanical, and other properties via compositional "engineering". The compositiondependent structural characteristics such as formation of homopolar bonds and of molecular and other low-dimensional structural units and violation of chemical order are expected to control a wide range of physical properties relevant to various technological applications of these materials. A number of studies of the short-and intermediate-range atomic structure of simple binary chalcogenide glasses in AsX, PX, and GeX (X ) S, Se) systems have been reported in the literature over the past several decades. 7-19 However, in contrast, structural studies of complex glasses in the ternary and quaternary Ge-As-S/Se/Te systems had been rather limited and had focused mostly on short-range order only. 20-24 This is primarily due to the fact that direct experimental studies of structural characteristics beyond the nearest-neighbor length scale are particularly difficult with spectroscopic techniques alone. A number of previous studies have investigated the compositional evolution of the length scale of intermediate-range order in ternary Ge-As-S glasses along the join GeS 2 -As 2 S 3 in a phenomenological fashion using Raman spectroscopy. [25][26][27] These studies have used the Ioffe-Regel criterion to relate the position of the Boson peak in the Raman spectra to a length scale of intermediate-range order that increased with increasing GeS 2 content and ranged from a few angstrom to 20 Å in GeS 2 -As 2 S 3 glasses. On the other hand, a recent Raman spectroscopic study of ternary (Ge 2 S 3 ) x (As 2 S 3 ) 1-x glasses has...

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“…Chalcogenide glasses in the Ge-As-S/Se/Te ternary systems are of wide-ranging importance in a variety of technological applications such as in passive and active optical devices primarily due to their tunable infrared transparency over a wide frequency range and their strong optical nonlinearity [1][2][3][4]. Recently there has been a renewed surge of interest in telluride glasses as amorphous Ge-Sb-Te thin film materials exhibit interesting phase change phenomena induced by optical or electrical switching that can be exploited in rewritable optical data storage and in non-volatile electronic memory applications [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%