Recent Advances in 2-μm GaSb-Based Semiconductor Disk Laser—Power Scaling, Narrow-Linewidth and Short-Pulse Operation

Kaspar, Sebastian; Rattunde, M.; Töpper, Tino; Moser, Rüdiger; Adler, Steffen; Manz, C.; Köhler, K.; Wagner, J.

doi:10.1109/jstqe.2013.2244568

Cited by 22 publications

(8 citation statements)

References 26 publications

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“…Second, power scaling can be obtained by introducing multiple gain elements ( figure 4(d)) into the same cavity [69][70][71]. In effect, such an approach divides the pump-induced heat load between multiple gain elements, though the increased number of gain elements can also introduce higher intracavity losses that limit the power scalability [50,72,73]. A third power scaling approach utilizes double-side cooling, where the gain element is used as a transmissive element, as illustrated in figure 4(e).…”

Section: Cavity Design and Power Scaling Considerationsmentioning

confidence: 99%

“…The scattering losses associated with the gain mirror arise from its surface roughness [178,222,230] and intracavity heat spreaders [73,100] and scale with the mode size on the gain element [222,231]. Additional losses result from leakage through the cavity mirrors and intracavity components such as wavelength filters and SHG crystals.…”

Section: Intracavity Optical Lossesmentioning

confidence: 99%

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Optically pumped VECSELs: review of technology and progress

Guina

Rantamäki

Härkönen

2017

J. Phys. D: Appl. Phys.

194

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Section: Cavity Design and Power Scaling Considerationsmentioning

confidence: 99%

Section: Intracavity Optical Lossesmentioning

confidence: 99%

Optically pumped VECSELs: review of technology and progress

Guina

Rantamäki

Härkönen

2017

J. Phys. D: Appl. Phys.

194

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“…As shown in Fig. 7 46 , for preventing the wavelength stability of GaSb based SDL from environmental noise, the cavity structure was packaged by an Al box. The character of narrow line-width with high output power makes GaSb based SDLs especially attractive for remote sense and photo-communication.…”

Section: Line-width Narrowingmentioning

confidence: 99%

Progress of optically pumped GaSb based semiconductor disk laser

Shu

Hou

Feng

et al. 2018

Opto-Electronic Advances

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This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained from the GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors (SESAM) in the cavity.

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“…The promise of the VECSEL medium has been well demonstrated with continuous wave (CW) emission exceeding 100W [1], great wavelength flexibility at the design stage [2,3], and external cavities which allow for filtering or frequency doubling elements to be included intracavity [4,5]. Efforts to modelock VECSELs have yielded pulses below 100fs [6] and operation in the kilowatt range of peak powers [7,8].…”

Section: Introductionmentioning

confidence: 99%

Multi-angle VECSEL cavities for dispersion control and multi-color operation

Baker

Scheller

Laurain

et al. 2017

Vertical External Cavity Surface Emitting Lasers (VECSELs) VII

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We present a novel Vertical External Cavity Surface Emitting Laser (VECSEL) cavity design which makes use of multiple interactions with the gain region under different angles of incidence in a single round trip. This design allows for optimization of the net, round-trip Group Delay Dispersion (GDD) by shifting the GDD of the gain via cavity fold angle while still maintaining the high gain of resonant structures. The effectiveness of this scheme is demonstrated with femtosecond-regime pulses from a resonant structure and record pulse energies for the VECSEL gain medium. In addition, we show that the interference pattern of the intracavity mode within the active region, resulting from the double-angle multifold, is advantageous for operating the laser in CW on multiple wavelengths simultaneously. Power, noise, and mode competition characterization is presented.

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Recent Advances in 2-μm GaSb-Based Semiconductor Disk Laser—Power Scaling, Narrow-Linewidth and Short-Pulse Operation

Cited by 22 publications

References 26 publications

Optically pumped VECSELs: review of technology and progress

Optically pumped VECSELs: review of technology and progress

Progress of optically pumped GaSb based semiconductor disk laser

Multi-angle VECSEL cavities for dispersion control and multi-color operation

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