2017
DOI: 10.1007/s11664-017-5449-1
|View full text |Cite
|
Sign up to set email alerts
|

Reactively Sputtered Cu2ZnTiS4 Thin Film as Low-Cost Earth-Abundant Absorber

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 19 publications
0
3
0
Order By: Relevance
“…Though the current Cu 2 ZnTiSe 4 device performance is inferior to that of Cu 2 ZnSn(S,Se) 4 or Cu 2 ZnGeSe 4 due to its unstable chemical potential region and worse absorbing lm quality, its absorption coefficient is twice that of Cu 2 -ZnSn(S,Se) 4 , and it has excellent photoelectric performance. [29][30][31][32][33] Therefore, it is expected that Sn-related detrimental defects, including Cu Sn antisites and [2Cu Zn + Sn Zn ] defect clusters can be suppressed, and superior light absorption can be established by partially replacing Sn with Ti in the CZTSSe absorber layer.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Though the current Cu 2 ZnTiSe 4 device performance is inferior to that of Cu 2 ZnSn(S,Se) 4 or Cu 2 ZnGeSe 4 due to its unstable chemical potential region and worse absorbing lm quality, its absorption coefficient is twice that of Cu 2 -ZnSn(S,Se) 4 , and it has excellent photoelectric performance. [29][30][31][32][33] Therefore, it is expected that Sn-related detrimental defects, including Cu Sn antisites and [2Cu Zn + Sn Zn ] defect clusters can be suppressed, and superior light absorption can be established by partially replacing Sn with Ti in the CZTSSe absorber layer.…”
Section: Introductionmentioning
confidence: 99%
“…28 In parallel, Seniha Adiguzel et al prepared a Cu 2 ZnTiSe 4 kesterite structured semiconductor by completely replacing Sn with Ti, providing a new isoelectronic substitution scenario for Sn. 29 Compared with Ga and Ge, Ti possesses advantages of earth-abundant nature and valence state tolerance regarding Sn substitution. Though the current Cu 2 ZnTiSe 4 device performance is inferior to that of Cu 2 ZnSn(S,Se) 4 or Cu 2 ZnGeSe 4 due to its unstable chemical potential region and worse absorbing film quality, its absorption coefficient is twice that of Cu 2 ZnSn(S,Se) 4 , and it has excellent photoelectric performance.…”
Section: Introductionmentioning
confidence: 99%
“…Adiguzel et al grew Cu 2 ZnTiS 4 thin films on glass using the reactive cosputtering method using high‐purity ZnS and Cu and Ti metals as targets and H 2 S as reactive gas. [ 100 ] The films were deposited at different substrate temperatures of 100, 175, and 250 °C and with various H 2 S flow rates followed by annealing 400 °C for half an hour. The resulting Cu 2 ZnTiS 4 thin films exhibited a narrower bandgap and higher absorption coefficient compared with the conventional kesterite Cu 2 ZnSnS 4 , which were in agreement with the theoretical interpretations.…”
Section: Substitution Of Cations In Cztsmentioning
confidence: 99%