Rationalization of Nanowire Synthesis Using Low-Melting Point Metals

Chandrasekaran, Hari; Sumanasekara, Gamini U.; Sunkara, Mahendra K.

doi:10.1021/jp0639750

Cited by 42 publications

(33 citation statements)

References 35 publications

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“…In order to determine the doping concentration, electronic transport measurements should be realized. Preliminary studies corroborate the potential of gallium as a catalyst for the synthesis of silicon nanowires [26,27,31,32]. As an example, extensive carpets of nanowires have been realized by exposing a gallium coated silicon wafer to high power hydrogen plasma [31].…”

Section: Introductionmentioning

confidence: 68%

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Zardo

Conesa‐Boj

et al. 2009

Nanotechnology

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Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between 111 and 112 , depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor-liquid-solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.

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Section: Introductionmentioning

confidence: 68%

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Zardo

Conesa‐Boj

et al. 2009

Nanotechnology

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“…The pyrolysis experiments clearly showed that Ga droplets act as an initiator (catalyst) for the GaSb nanowire growth. Ga droplets have been shown in the past to initiate nanowire growth of a variety of materials such as Si and Ge [28]. Therefore we were interested in the deposition of small Ga droplets with a defined diameter.…”

Section: Resultsmentioning

confidence: 99%

Self-catalyzed growth of GaSb nanowires at low reaction temperatures

Schulz

Schwartz

Kuczkowski

et al. 2010

Journal of Crystal Growth

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a b s t r a c tThermal decomposition of Lewis acid-base adducts [t-Bu 3 Ga-Sbi-Pr 3 ] (1) and [t-Bu 3 Ga] 2 [Sb 2 Et 4 ] (2) in closed glass ampoules at temperatures between 250 and 350 1C yielded crystalline GaSb nanowires. Isolated GaSb nanowires were formed preferably at low decomposition temperatures, whereas dendritic-like growth was observed at higher decomposition temperatures. In addition, self-catalyzed growth of GaSb nanowires using 90 nm-sized Ga droplets, which were pre-deposited on Si(1 0 0) substrates, was achieved with the distibine Sb 2 Et 4 at 250 1C.

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“…We have not been able to significantly decrease the diameter of the nanowires by using lower thicknesses of cobalt and nickel films, although as mentioned above the catalytic oxidation of VO 2 yields thinner wires as compared to the use of V 2 O 5 as the precursor. Chandrasekaran et al have theoretically derived an expression for the nanowire diameter ( d ) as a function of the catalyst molar volume ( V m ), interfacial energy ( σ ), and the ratio of the solute concentration at the point of instability to the corresponding equilibrium solubility ( X / X ′) at a given temperature T 24 …”

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confidence: 99%

Catalytic Growth of Single‐Crystalline V₂O₅ Nanowire Arrays

Velázquez

Banerjee

2009

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The development of fabrication approaches for preparing 1D nanostructures such as nanowires and nanotubes has contributed greatly to advancing fundamental understanding of these systems, and has spurred the integration of these materials in novel electronic and photonic devices. [1][2][3] Significant progress has been achieved over the last decade in the preparation of ordered arrays of carbon nanotubes, II-VI and III-V semiconductors, and some binary oxides such as ZnO. In contrast, relatively less attention has been focused on layered materials with potential for electrochemical energy storage. Here, we describe the catalyzed vapor transport growth of vertical arrays of orthorhombic V 2 O 5 nanowires. Substantial control has been obtained over the length and surface coverage of these highly oriented nanowire arrays.V 2 O 5 crystallizes in a simple orthorhombic structure comprising layers of [VO 5 ] square pyramids sharing edges and corners. [4,5] The layers themselves are weakly bound by electrostatic forces along the c-axis and the spacing between the layers provides abundant sites for the facile intercalation of various guest species. [6,7] This layered structure of V 2 O 5 along with the facile reversibility of the V 5þ /V 4þ redox couple makes this material an attractive candidate for electrochemical energy storage via the intercalation and deintercalation of Li-ions. [4,7,8] Most notably, the intercalation voltage in V 2 O 5 is well matched with the stability window of polymer electrolytes that are being explored for Li-ion polymer batteries to power electric and hybrid vehicles. [9] Scaling V 2 O 5 to nanoscale dimensions offers the potential for increased power and energy densities because of shorter solid-state diffusion path lengths, improved interfacial contact with the electrolyte, and the operation of Li-ion storage mechanisms not accessible in the bulk. [10][11][12] Recently, Cui and co-workers have demonstrated the completely reversible lithiation and delithiation of sub-100-nm-diameter nanowires even for lithiated phases Li x V 2 O 5 with x approaching 3.0. [10] In contrast, in bulk V 2 O 5 the lithiation process is irreversible at such stoichiometries. The remarkably improved Li-ion diffusion kinetics and enhanced power densities observed for V 2 O 5 nanostructures (as compared to bulk V 2 O 5 ) has spurred increasing interest in the controlled synthesis of V 2 O 5 nanostructures with tunable dimensions. [13,14] Several different approaches have been used to prepare V 2 O 5 nanowires, nanoribbons, nanosheets, and nanotubes including hydrothermal syntheses, [13][14][15] sol-gel methods, [16] electrodeposition, [7,17] and vapor transport. [10] Cui and co-workers have articulated the need for a nanorod battery architecture with vertical arrays of nanorods in direct contact with a collector electrode to obtain high power rates limited only by the charging/discharging of single nanorods. [10] The caveat here is that the electrochemical properties of such systems need not be correlated to the surface ...

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Rationalization of Nanowire Synthesis Using Low-Melting Point Metals

Cited by 42 publications

References 35 publications

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Self-catalyzed growth of GaSb nanowires at low reaction temperatures

Catalytic Growth of Single‐Crystalline V₂O₅ Nanowire Arrays

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Rationalization of Nanowire Synthesis Using Low-Melting Point Metals

Cited by 42 publications

References 35 publications

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Self-catalyzed growth of GaSb nanowires at low reaction temperatures

Catalytic Growth of Single‐Crystalline V2O5 Nanowire Arrays

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Catalytic Growth of Single‐Crystalline V₂O₅ Nanowire Arrays