2015
DOI: 10.1002/pssa.201532162
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Raman study of insulating and conductive ZnO:(Al, Mn) thin films

Abstract: Raman spectroscopy results obtained for undoped and Aland/or Mn-doped ZnO thin films produced by RF-sputtering are reported. The effect of the doping method (either cosputtering or ion implantation), the dopant type, and its concentration on the Raman-active vibrational modes in these films were studied in detail. The results are discussed with focus on the peak shifts and broadening, and on the doping-induced relaxation of the symmetry selection rules. A particular attention is paid to the 520-530 cm À1 Raman… Show more

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Cited by 17 publications
(12 citation statements)
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“…Additionally, the peak at 1356 cm −1 is associated with the vibration of carbon atoms (D band). Accordingly, the phonon frequencies of the Raman spectra attributed to ZnO are: 332 cm −1 (multiple-phonon scattering processes), 379 cm −1 (A1(TO)), 438 cm −1 (E2(high)), 483 cm −1 (2LA), 574 cm −1 (A1(LO)), and 663 cm −1 (TA+A1(LO)); which are in agreement with the literature [30,33,34,35], with the E2(high) mode at 438 cm −1 exhibitingthe strongest intensity. The rest peaks shown in the Raman spectrum of Figure 3 can be matched to the PLA of the materials.…”
Section: Resultssupporting
confidence: 91%
“…Additionally, the peak at 1356 cm −1 is associated with the vibration of carbon atoms (D band). Accordingly, the phonon frequencies of the Raman spectra attributed to ZnO are: 332 cm −1 (multiple-phonon scattering processes), 379 cm −1 (A1(TO)), 438 cm −1 (E2(high)), 483 cm −1 (2LA), 574 cm −1 (A1(LO)), and 663 cm −1 (TA+A1(LO)); which are in agreement with the literature [30,33,34,35], with the E2(high) mode at 438 cm −1 exhibitingthe strongest intensity. The rest peaks shown in the Raman spectrum of Figure 3 can be matched to the PLA of the materials.…”
Section: Resultssupporting
confidence: 91%
“…The spectrum shows two basic phonon modes of the hexagonal wurtzite phase ZnO at 434 and 567 cm −1 , which represents the E 2 H and A 1 LO , respectively. The E 2 H is associated with the vibration of oxygen atoms and can be related to the degree of crystallization whereas A 1 LO band is associated with the defects such as oxygen deficiencies, zinc interstitial, or their complexes [ 49 , 50 ]. The band at 327 cm −1 and 1134 cm −1 represent the multi-phonon scattering processes of ZnO [ 51 ].…”
Section: Resultsmentioning
confidence: 99%
“…In this context, high quality layers of ZnO have been grown and evaluated mainly via vapor phase techniques such as molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and RF-sputtering [30][31][32]. However, these growth or deposition methods are very expensive and are not flexible as far as growth conditions are concerned.…”
Section: Introductionmentioning
confidence: 99%