2020
DOI: 10.48550/arxiv.2004.14335
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Raman spectroscopy of ion irradiated SiC: chemical defects, strain, annealing, and oxidation

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“…The molecular vibration, sample density, and lattice damage induced by ion implantation [34] can be reflected by the Raman spectra. The Raman spectra were measured at different depths of the H-and C-ion-implanted Nd:YLF samples: the electronic-energy-lossdominant region, nuclear-energy-loss-dominant region, and substrate region, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The molecular vibration, sample density, and lattice damage induced by ion implantation [34] can be reflected by the Raman spectra. The Raman spectra were measured at different depths of the H-and C-ion-implanted Nd:YLF samples: the electronic-energy-lossdominant region, nuclear-energy-loss-dominant region, and substrate region, respectively.…”
Section: Resultsmentioning
confidence: 99%