Raman investigation of damage caused by deep ion implantation in diamond

Orwa, J. O.; Nugent, K. W.; Jamieson, David N.; Prawer, S.

doi:10.1103/physrevb.62.5461

Cited by 185 publications

(204 citation statements)

References 23 publications

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“…Previous work reported that this annealing strategy causes most of the ion-induced damage to be removed and the crystalline diamond structure to be recovered. [13] This is confirmed by Raman characterization of the samples: Raman spectra exhibit clear diamond features and low residual damage in the annealed microstructures.…”

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Ion‐Beam‐Assisted Lift‐Off Technique for Three‐Dimensional Micromachining of Freestanding Single‐Crystal Diamond

et al. 2005

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Diamond is a very attractive material for micromachining: it has high mechanical hardness, high Young's modulus, a low coefficient of friction, high thermal conductivity, and a low thermal expansion coefficient. It is chemically inert and biocompatible. Optically, it is transparent over the widest range of the electromagnetic spectrum (from 220 nm to the far infrared), has a high refractive index, and exhibits a vast inventory of luminescent centers (> 500 electronic, > 150 vibrational), many of which are related to impurities or defects in the crystalline structure.[1] Some of these can therefore be controlled and engineered. Of particular interest is the nitrogen vacancy (NV -) center that possesses very promising quantum properties. [2] At present, despite the prospects for such luminescent centers, no fabrication schemes have been demonstrated for integrated microphotonic devices in diamond. The micromachining of three-dimensional structures in bulk diamond is technologically challenging; [3][4][5][6] therefore, most existing techniques are based on the use of chemical vapor deposition (CVD) of polycrystalline films combined with selective ablation or replication processes that employ masking and molding. Previous work reports the use of such methods to produce scanning probe tips and cantilevers, [3] field emitters, [4] microelectromechanical systems (MEMS), [5] nanoelectromechanical systems (NEMS), [6] and microfluidic channels. [7] Two-dimensional microstructures (holes and trenches) can be drilled in single crystals by means of high-power laser ablation. [8,9] Compared to single-crystal diamond, CVD polycrystalline diamond has poor optical transparency and inferior and lessreproducible mechanical properties. This constitutes a limitation for many technological applications. Here we report a new method for the fabrication of freestanding microstructures in bulk single-crystalline diamond. The method takes advantage of the fact that ion irradiation of diamond followed by thermal annealing induces a phase transformation to amorphous carbon, which can be selectively etched to leave freestanding diamond structures. We also report the construction of an optical waveguide structure integrated with total internal reflection mirrors, constituting the first waveguide fabricated in single-crystal diamond. Potential applications of this technique are in the development of fully integrated quantum photonic devices employing photoluminescent centers in diamond, and in the field of MEMS, microfluidics, and biophysics.Our method is inspired by the diamond lift-off technique, which was initially developed as a method to remove thin layers from bulk diamond samples.[10] The present work is based on MeV ion implantation followed by thermal annealing to create a buried sacrificial layer at a well-defined depth. Patterned milling with a focused ion beam (FIB) is then used to expose defined regions of the sacrificial layer to selective chemical etching and subsequent lift-off. A final thermal-annealing step is employed to r...

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“…[12,13] Therefore, after the annealing process only in the highly damaged layer (which is exposed to the surface through the FIB-machined trenches), the crystal structure is converted to tetrahedral amorphous carbon, while in the lessdamaged regions the diamond structure is recovered.…”

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Ion‐Beam‐Assisted Lift‐Off Technique for Three‐Dimensional Micromachining of Freestanding Single‐Crystal Diamond

et al. 2005

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“…17 This is surprising, given the fact that the same ions (i.e. He + ) were implanted at similar energies (i.e.…”

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Raman spectroscopic features of the neutral vacancy in diamond from ab initio quantum-mechanical calculations

Baima

Zelferino

Olivero

et al. 2016

Phys. Chem. Chem. Phys.

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“…30,50 This situation is similar to the damages caused by high energy ͑MeV͒ ion implantation which quench the luminescence giving rise to an increase in nonradiative recombination events in the heavily damaged regions. 51 Such changes in the CL spectra are thus due to an arising disorder in which vacancies and interstitials combine themselves in more complicated, mainly nonradiative, complexes such as vacancy clusters 52 and vacancy-interstitial aggregates.…”

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confidence: 87%

Characterization of damage induced by heavy neutron irradiation on multilayered L6iF-single crystal chemical vapor deposition diamond detectors

Almaviva

Angelone

Marinelli

et al. 2009

Journal of Applied Physics

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High performance neutron detectors sensitive to both thermal and fast neutrons are of great interest to monitor the high neutron flux produced, e.g., by fission and fusion reactors. An obvious requirement for such an application is neutron irradiation hardness. This is why diamond based neutron detectors are currently under test in some of these facilities. In this paper the damaging effects induced in chemical vapor deposition (CVD) diamond based detectors by a neutron fluence of ∼2×1016 neutrons/cm2 have been studied and significant changes in spectroscopic, electrical, and optical properties have been observed. The detectors are fabricated using high quality synthetic CVD single crystal diamond using the p-type/intrinsic/Schottky metal/L6iF layered structure recently proposed by Marinelli et al. [Appl. Phys. Lett. 89, 143509 (2006)], which allows simultaneous detection of thermal and fast neutrons. Neutron radiation hardness up to at least 2×1014 n/cm2 fast (14 MeV) neutron fluence has been confirmed so far [see Pillon et al., (Fusion Eng. Des. 82, 1174 (2007)]. However, at the much higher neutron fluence of ∼2×1016 neutrons/cm2 damage is observed. The detector response to 5.5 MeV A241m α-particles still shows a well resolved α-peak, thus confirming the good radiation hardness of the device but a remarkable degradation and a significant instability with time of charge collection efficiency and energy resolution arise. Symmetric, nearly Ohmic I-V (current-voltage) characteristics have been recorded from the metal/intrinsic/p-doped diamond layered structure, which before neutron irradiation acted as a Schottky barrier diode with a strong rectifying behavior. The nature and the distribution of the radiation induced damage have been deeply examined by means of cathodoluminescence spectroscopy. A more heavily damaged area into the intrinsic diamond at the same position and with the same extension of the L6iF layer has been found, the increased damage being ascribed to the highly ionizing particles produced in the L6iF layer by thermal neutrons through the nuclear reaction L6i(n,α)T.

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Raman investigation of damage caused by deep ion implantation in diamond

Cited by 185 publications

References 23 publications

Ion‐Beam‐Assisted Lift‐Off Technique for Three‐Dimensional Micromachining of Freestanding Single‐Crystal Diamond

Ion‐Beam‐Assisted Lift‐Off Technique for Three‐Dimensional Micromachining of Freestanding Single‐Crystal Diamond

Raman spectroscopic features of the neutral vacancy in diamond from ab initio quantum-mechanical calculations

Characterization of damage induced by heavy neutron irradiation on multilayered L6iF-single crystal chemical vapor deposition diamond detectors

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