Raman and photoacoustic spectroscopies of SnO2 thin films deposited by spin coating technique

Facile fabrication of defect-induced 2D-stanene/stanene-oxide nano-sheet structure material through etching of SnOx thin film by the process of successive Ar+ ion sputtering

“…Figure 4 shows the Raman spectrum of τ = 600 s etched SnOx films that shows different peaks, arises at ≈56 cm −1 , ≈87 cm −1 , ≈110 cm −1 , ≈136 cm −1 , ≈181 cm −1 , ≈233 cm −1 , ≈290 cm −1 , ≈356 cm −1 , ≈475 cm −1 , ≈556 cm −1 and ≈790 cm −1 , respectively. These peaks are assigned as Γ 3 -point photon modes of β-Sn (≈56 cm −1 ), Γ 5 -point photon modes of β-Sn (≈136 cm −1 ), Raman mode of SnO (un-passivated SnO → 87 cm −1 , A 1g → 181 cm −1 , E u → 233/290 cm −1 ) and Raman mode of SnO 2 (B 1g → 110 cm −1 , A 2g → 356 cm −1 , E g → 475 cm −1 , A 1g → 557 cm −1 , B 2g → 790 cm −1 ), respectively [20][21][22][23][24][25]. With increase of sputtering time τ = 1500 s, 3300 s, 3900 s (Fig.…”