Radiation Hardness of Ovonic Devices

Amorphous semiconductors

“…If the effect is real, however, two possible explanations are available, depending on the as yet undetermined value of g(Ef). Ovshinsky et al 658 assumed g(Ef) is of the order of lozo ~r n -~ eV-' , in accordance *with the field-effect results of Fritzsche et al,657 corresponding trap density is then sufficiently large to accommodate the space charge near each electrode within a 30 A region. Such narrow Schottky barriers would always allow carrier injection to freely occur by means of tunneling, thus yielding ohmic contacts.…”

Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements

“…The chalcogenide cell is expected to be inherently radiation hard to both ionizing and displacement effects because 1) C-RAM stores information by means of structural film changes instead of through the manipulation of exceedingly small amounts of charge (like Flash or DRAM), 2) structural changes occur along percolation paths, and 3) structure is established through application of a time-sensitive heating much greater than that generated by ionizing radiation [9]. The susceptibility to radiation environments is expected to be determined instead by the hardness of the underlying semiconductor technology.…”

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

“…The intrinsic defects manifest themselves as "gap states" in the bandgap of the chalcogenide glasses. [28,29] Near the center of the gap, the states are highly localized so, the electron exchange or hopping probability is low. It was proposed [28,30] that in chalcogenide glasses, these defect states are at dangling bonds D 0 , and the lattice (not in the crystalline but in the network sense) distortion is powerful enough to produce charged centers D þ and D À out of D 0 .…”