Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons

Šagátová, Andrea; Затько, Б.; Dubecký, F.; Tu, Ly Anh; Nečas, Vladimı́r; Sedlačková, Katarína; Pavlovič, Márius; Fülöp, M.

doi:10.1016/j.apsusc.2016.08.167

Cited by 29 publications

(26 citation statements)

References 17 publications

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“…The solar cells, photodetectors, light-emitting diodes and field-effect transistors based on GaAs have been widely applied in aerospace industry. However, in the outer space environment, the cosmic rays such as high-energy protons, high-energy electrons, X-rays, neutrons and gamma rays have significant impacts on the performance of electronic devices and instruments [6][7][8][9][10][11]. In order to improve the survivability and reliability of devices under various radiation environments, it is necessary to study the photoelectric behavior of electronic devices based on GaAs under irradiation conditions.…”

Section: Introductionmentioning

confidence: 99%

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

et al. 2020

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GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristics of Si-doped GaAs under different gamma irradiation doses (0, 0.1, 1 and 10 KGy) are investigated. Surface morphology studies show roughen of the surface with irradiation. Appearance of transverse-optical (TO) phonon mode and blueshift of TO peak reflect the presence of internal strain with irradiation. The average strain has been measured to be 0.009 by Raman spectroscopy, indicating that the irradiated zone still has a good crystallinity even at a dose of 10 KGy. Photoluminescence intensity is increased by about 60% under 10 KGy gamma irradiation due to the strain suppression of nonradiative recombination centers. Furthermore, the current of Si-doped GaAs is reduced at 3V bias with the increasing gamma dose. This study demonstrates that the Si-doped GaAs has good radiation resistance under gamma irradiation, and appropriate level of gamma irradiation can be used to enhance the luminescence property of Si-doped GaAs.

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Section: Introductionmentioning

confidence: 99%

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

et al. 2020

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“…As the electron mobility of the GaAs is approximately 6 times greater than Si, this should allow for a device which functions over a shorter time scale. A. Sagatova et al investigated the radiation hardness of GaAs devices against gamma radiation, high energy electrons and fast neutrons [58]. The detectors, beams and doses used in their experimentation is summarised in Table 3.…”

Section: Gallium Arsenidementioning

confidence: 99%

Detection of strontium-90, a review and the potential for direct in situ detection

Turkington

Gamage

Graham

2018

2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)

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Strontium-90 is one of the primary beta-emitting radionuclides found at nuclear decommissioning sites. Monitoring its activity in the environment is of utmost importance given its radiotoxicity. Current procedures for the beta detection of strontium-90 are time consuming, produce secondary waste and expensive. There is a demand for real-time in situ radiostrontium monitoring in groundwater at nuclear decommissioning sites. This paper presents a review of existing techniques for strontium-90 monitoring and examines a novel approach through direct beta detection with a gallium arsenide photodiode based detector. A proof of concept detector was modelled in the physics simulation software, Geant4, and evaluated as candidate for in situ detection of beta emitting radionuclides. The simulation results indicate that the detector is physically capable of counting 89.86% of incident 0.546 MeV electrons from a 1 mm range in water. This validation will provide the basis for further development of an in situ beta detector.

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“…Photovoltaic cells such as Si and GaAs are used for applications of ionizing radiation in high-energy physics experiments, medical imaging, electronics or space applications [1][2][3][4]. Especially, it is important to investigate the radiation hardness of solar cells that are used as energy sources in space applications.…”

Section: Introductionmentioning

confidence: 99%

Gama ile Işınlanmış Fotovoltaik Hücrelerin Elektriksel Parametrelerinin Araştırılması

Karadeniz

2019

Nevşehir Bilim Ve Teknoloji Dergisi

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In this study, some electrical characteristics such as current-voltage (I-V), power-voltage (P-V), maximum power (Pmax), fill factor (FF), short-circuit current (ISC), open circuit voltage (VOC) and power conversion efficiency (η) of silicon based photovoltaic cells have been investigated before and after irradiation. 10 kGy and 30 kGy radiation doses have been applied on cells using a 60 Co radioisotope as irradiation source. Radiation dose rates have been decreased the open circuit voltage and short circuit current density and finally affected the performance of the solar cells. This attributed to radiation-produced recombination centers in the energy band gap of structures.

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Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons

Cited by 29 publications

References 17 publications

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

Detection of strontium-90, a review and the potential for direct in situ detection

Gama ile Işınlanmış Fotovoltaik Hücrelerin Elektriksel Parametrelerinin Araştırılması

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