Radiation effects on current field programmable technologies

Current radiation issues for programmable elements and devices

“…Pre-Print to be published in the IEEE Transactions on Nuclear Science, December, 1998 V, total dose hardness for the RTSX can be made greater than 100krads (Si) and the RHSX prototype easily passes 200 krads (Si) [1]. A radiation-hardened antifuse structure has been demonstrated passing tests at a LET of 82.3 MeV-cm2/mg.…”

“…Biased, unprogrammed antifuses are susceptible to heavy ion-induced rupture and improvements have been made in antifuse design [1]. Recent testing has augmented our data set for the hardened antifuse in the RH1020, with the production devices' antifuses having a 90 A thickness.…”

“…These devices are enabled by advances in processing technologies that are critical for controlling the thickness of the programmable elements. References [1][2][3] discuss their hardness to total dose effects.…”

“…Antifuse rupture data is a function of heavy ion LET and electric field strength [1] and the failure points of some of the amorphous silicon antifuses occur at a far lower electric field strength than either the ONO antifuses or the SiO2 reference data [6], Failure analysis, using several different techniques, has been conducted, assisting in the determination of failure and investigation of the mechanisms.…”

“…structures are susceptible to rupture [1]. Various "recipes" for these elements are explored and data is shown for a highspeed, radiation-hardened antifuse.…”