M. Wolff, J.W. Schultze, J.-L. Delplancke, Ch. Buchal, L. Elfenthal
Abstract:40 nm T i02 layers on T i have been formed by anodic polarization. Implantation of 200 keV T i * ions induces amorphization which dépends on the température. Subséquent repassivation to potentials below the formation potential causes recrystallization and additional oxide growth. T he activation energy for ion migration is lowered by implantation. T he additional oxide growth differs after 200 keV T i* and 200 keV Pd* implantation. T he rate determining step is located at the interface Ti/TiOj. T his gives for…
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