Quantum well intermixing of tensile strain GaInP quantum well structures induced by ion implantation and thermal annealing

Lin, Tao; Li, Yaning; Xie, Junfeng; Ma, Zhihui; Zhao, Rongjin; Duan, Yupeng

doi:10.1016/j.mssp.2021.106306

Cited by 5 publications

(2 citation statements)

References 16 publications

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“…The 915/975 nm semiconductor lasers play an important role in pump sources, medical devices, chemical production, and optical communication thanks to their small size, light weight, and high power [1] . However, due to the characteristics of semiconductor lasers, the output power at the output cavity surface is the largest.…”

Section: Introductionmentioning

confidence: 99%

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

He,

Liu,

et al. 2023

J. Semicond.

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Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.

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Section: Introductionmentioning

confidence: 99%

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

He,

Liu,

et al. 2023

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…The rapid progression of QWI technology has led to the development of various approaches, including rapid thermal annealing, 5 , 6 impurity-induced disordering, 7 , 8 ion implantation-induced disordering, 9 , 10 impurity-free vacancy disordering (IFVD), 11 , 12 laser-induced disordering (LID), 13 and plasma-enhanced quantum well intermixing 14 . Among these, IFVD has gained extensive attention due to its minimal impact on laser device performance, attributed to its absence of impurity introduction.…”

Section: Introductionmentioning

confidence: 99%

Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering

He,

Qi,

Lin

et al. 2023

Opt. Eng.

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Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

et al. 2023

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Quantum well intermixing of tensile strain GaInP quantum well structures induced by ion implantation and thermal annealing

Cited by 5 publications

References 16 publications

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering

Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

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