Quantum-mechanical effects in nanometer scale MuGFETs

Yun, Se Re Na; Yu, Chong Gun; Park, Jong-Tae; Colinge, J.-P.

doi:10.1016/j.mee.2008.04.023

Cited by 17 publications

(11 citation statements)

References 16 publications

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“…These explain why both sides have identical well-above threshold behavior. The charge of TG MOS capacitors can therefore be obtained as below (35) where is from the boundary condition of SG MOSFETs, and is from the boundary condition of DG MOSFETs.…”

Section: B Triple-gate Mosfets [Fig 13(d)]mentioning

confidence: 99%

“…The final drain current expression is given by (38) where the functions and have been defined previously, and is defined as (39) [31]. Short-channel effects [32], [33] and quantum mechanical effects [34], [35] have been modeled, so have body doping [36], [37] and corner effects [38]. Several core models are reviewed below.…”

Section: Unified Drain Current Model For Multiple-gate Mosfetsmentioning

confidence: 99%

See 1 more Smart Citation

A Review on Compact Modeling of Multiple-Gate MOSFETs

Song

et al. 2009

IEEE Trans. Circuits Syst. I

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This paper reviews recent development on compact modeling of multiple-gate (MG) MOSFETs. Long-channel core models based on the analytical potential solutions of Poisson and current continuity equations for symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs have been developed first. Highly accurate explicit solutions are subsequently developed to deal with the implicit algebraic equations of the models. By adding quantum mechanical effects and short-channel effects, as well as capacitance formulations, the core model for DG MOSFETs has been expanded into a full-blown compact model which has been calibrated to and validated by experimental FinFET hardware. With regard to the various other types of MG MOSFETs developed, the core models for DG and SG MOSFETs have been generalized to the less symmetric structures, including quadruple-gate (QG), triple-gate (TG), 5-gate, and -gate MOSFETs. Other research activities on multiple-gate MOSFETs are briefly summarized at the end.

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Section: B Triple-gate Mosfets [Fig 13(d)]mentioning

confidence: 99%

Section: Unified Drain Current Model For Multiple-gate Mosfetsmentioning

confidence: 99%

A Review on Compact Modeling of Multiple-Gate MOSFETs

Song

et al. 2009

IEEE Trans. Circuits Syst. I

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“…To fully understand the electrostatic and transport behaviors of FinFET in the highly scaled regime of operation, especially in the sub 10 nm regime, it is important to fully incorporate the quantum mechanical (QM) effects [5] like the penetration of wavefunction into gate dielectric and electron energy quantization in the channel layer. These effects have been studied with respect to the variation of silicon fin width and the results indicate that fin width variation strongly influences QM effects in the nanometer scale regime [6], [7], [8].…”

Section: Introductionmentioning

confidence: 99%

On the distinction between triple gate (TG) and double gate (DG) SOI FinFETs: A proposal of critical top oxide thickness

Islam

Baten

Amin

et al. 2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

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Distinction between triple gate (TG) and double gate (DG) silicon-on-insulator (SOI) FinFETs is presented here on the basis of their electrostatic and transport characteristics. A study missing in previous works on DG and TG FinFETs is the characterization of these structures with respect to the variation of top oxide thickness. In fact an exact value of the top-oxide thickness that can differentiate DG FinFETs from TG ones has not been reported yet. From this perspective, electrostatic and transport characteristics of DG and TG FinFETs having sub-10 nm fin dimensions are investigated in this work as a function of the top oxide thickness. To duly incorporate the quantummechanical (QM) effects in such nanoscale regime of operation, the devices are simulated by self-consistently solving the coupled Schrödinger's and Poisson's equations. Simulation results suggest that DG and TG FinFETs can be differentiated by a parameter which we define in our work with respect to the surface potentials existing beneath the top and side gates. This finding in effect proposes a critical top oxide thickness of FinFET that can draw the distinction between its DG and TG variants. The results also indicate that deposition of top oxide layer beyond a limit does not bring about any significant change in the electrostatic and transport characteristic of DG FinFETs in the ballistic limit.

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“…But detailed analysis of how this method of calculating threshold voltage can be applicable for a wide range of device family is not presented. The method proposed in [11] for the calculation of threshold voltage in double gate devices has been modified in [12] for multigate devices using a fitting parameter. there are scopes of modifications in the model proposed in [12] if the quantum mechanical definition of threshold voltage is taken into consideration.…”

Section: Introductionmentioning

confidence: 99%

“…The method proposed in [11] for the calculation of threshold voltage in double gate devices has been modified in [12] for multigate devices using a fitting parameter. there are scopes of modifications in the model proposed in [12] if the quantum mechanical definition of threshold voltage is taken into consideration. In this paper, we calculate the quantum definition based threshold voltage of TG FinFETs for different silicon film widths.…”

Section: Introductionmentioning

confidence: 99%

Quantum mechanical effect on determining threshold voltage of trigate FinFET using self-consistent analysis

Amin

Baten

Islam

et al. 2009

TENCON 2009 - 2009 IEEE Region 10 Conference

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The quantum definition based threshold voltage has been evaluated for triple-gate (TG) SOI FinFETs using selfconsistent Schrödinger-Poisson solver. Although a new quantum definition of threshold voltage for multiple gate SOI MOSFETs has been provided in recent literature, in-depth analysis of quantization effects on threshold voltage calculation for highly scaled TG FinFETs is yet to be done. In this paper, the electrostatics of the device has been explored from a quantum mechanical point of view for variation in silicon film thickness in the sub 10nm regime. Also the self-consistent solver, which takes wave function penetration and other quantum mechanical (QM) effects into account, has been utilized here to establish the capacitancevoltage (C-V) characteristics and a modified approach has been proposed for threshold voltage calculation.

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Quantum-mechanical effects in nanometer scale MuGFETs

Cited by 17 publications

References 16 publications

A Review on Compact Modeling of Multiple-Gate MOSFETs

A Review on Compact Modeling of Multiple-Gate MOSFETs

On the distinction between triple gate (TG) and double gate (DG) SOI FinFETs: A proposal of critical top oxide thickness

Quantum mechanical effect on determining threshold voltage of trigate FinFET using self-consistent analysis

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