Quantum mechanical effect on determining threshold voltage of trigate FinFET using self-consistent analysis

Amin, Emran Md; Baten, Zunaid; Islam, Raisul; Khosru, Quazi D. M.

doi:10.1109/tencon.2009.5396110

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…Therefore, high-k gate dielectrics are the most promising alternatives which decrease leakage current at the cost of enhanced gate capacitance. Hafnium oxide is employed as a promising gate oxide material because of its excellent interface with Si, high-k value (22), big bandgap (5.6 eV), and conduction band offset (1.4 eV) with regard to Si. Most significantly, a decent electrical interaction with Si makes it a prospective alternative to silicon dioxide [17][18][19][20][21].…”

Section: Structural Dimensions Ie W mentioning

confidence: 99%

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Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

et al. 2023

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An inversion charge-based threshold voltage model is proposed for 10 nm channel length Tri-gate (TG) FinFET. The variation threshold voltage has been studied with respect to fin width W f i n for different fin height H f i n and channel length L . The effect of width quantization has been explained with the help of the quantum mechanical effect (QME). A precise comparison of threshold voltage in terms of classical mechanics and quantum mechanics depicts the presence of width quantization in short channel device. The improvement of the short channel effects (SCEs), like subthreshold swing (SS), drain-induced barrier lowering (DIBL) and threshold voltage roll off have been studied. The impact of channel length to fin width ratio on DIBL and S S has been examined. The improvement of the SCEs at the same oxide thickness has been observed for high-k dielectric material. The potential and effect of hafnium oxide (HfO2) have been discussed and validated using technology computer-aided design (TCAD) simulation.

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Section: Structural Dimensions Ie W mentioning

confidence: 99%

“…A self-consistent Schrodinger-Poisson solver was reported by Emran Md. Amin et al But without using a complex Schrodinger-Poisson equation, this paper makes an effort to indicate the effect of width quantization on the threshold voltage [22]. Saha et al reported a triple materials gate (TMG) TG-FinFET [23].…”

Section: Structural Dimensions Ie W mentioning

confidence: 99%

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

et al. 2023

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“…To address these challenges, FinFETs stand out as prospective electronic devices [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] due to their improved scalability and ability to control SCEs. The functionality of nanoscale FinFETs is now transitioning into a region where quantum mechanical effects such as quantum confinement effects are becoming discernible [31][32]. This confinement alters the energy band structure of the material, leading to discrete energy levels and affecting electron mobility.…”

Section: Introductionmentioning

confidence: 99%

Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study

Shehu,

Garba Babaji,

Mutari Hajara Ali

2024

IJPR

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This work investigates the impact of electron mobility variations on short channel effects (SCEs) in different semiconductor materials using FinFETs. Using PADRE simulator, the work examines Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si) FinFETs, analyzing performance metrics such as Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS) and Threshold Voltage roll-off. The result shows that GaN-FinFET exhibits lowest subthreshold swing of 63 mV/dec at electron mobility of 10000 cm2/Vs, and threshold voltage of 0.44V at electron mobility of 10000 cm2/Vs, while Si-FinFET exhibits lowest DIBL of 3 mV/V at (4000-10000) cm2/Vs. This finding contributes to advancing the understanding of short channel effects in nanoscale FinFETs and provides valuable insights for optimizing device performance in future semiconductor technologies.

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“…This device uses low power to change from a turn off to turn on, same to electrical switch. It uses the bias voltage about 0.2 -0.3 volts to change working state [2]. In operating of FinFET, it giving many variables and the one significant is carrier mobility [3].…”

Section: Introductionmentioning

confidence: 99%

Effect of Temperature on 16 nm n-FiNFET

Pengchan

2018

KEM

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This research presents the effect of temperature that influence to the performance of 16 nm SOI n-FinFET structure. The structure has created with structure tool on GTS Framework. The transistor has 1 nanometer HfO2 gate oxide with all metal contact and biased on Minimos-NT tool, with variation of temperatures from 300 K to 420 K with 30 K per step. The result found the decrease in saturation current, threshold voltage and mobility. The temperature brought electron and rose the density of electron as the potential from power supply that energized to the structure. They made mobility fall with them rising. The temperature makes a performance of FinFET structure.

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Quantum mechanical effect on determining threshold voltage of trigate FinFET using self-consistent analysis

Cited by 6 publications

References 12 publications

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study

Effect of Temperature on 16 nm n-FiNFET

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