Quantum interference phenomena and electron – electron interaction in topological insulator Bi2Se3 thin polycrystalline films

Рогачева, Е. И.; Pavlosiuk, Orest; Meriuts, A. V.; Shelest, T. N.; Sipatov, A. Yu.; Nashchekina, O. N.; Novák, Karel; Kaczorowski, D.

doi:10.1016/j.tsf.2021.139070

Cited by 7 publications

(6 citation statements)

References 54 publications

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“…The same phenomenon also occurs in Mn-doped films with x = 0.10 and 0.15. The data can be analyzed utilizing the Hikami−Larkin−Nagaoka (HLN) formula presented as following: 23–25,42–44 where Ψ is the digamma function, l ϕ is the phase coherence length, and α is a coefficient indicating the type of localization. When the value of α is positive, the localization type is WL.…”

Section: Resultsmentioning

confidence: 99%

“…The same phenomenon also occurs in Mn-doped lms with x = 0.10 and 0.15. The data can be analyzed utilizing the Hikami−Larkin−Nagaoka (HLN) formula presented as following: [23][24][25][42][43][44] Ds ¼ ae…”

Section: Quantum Transport Performancementioning

confidence: 99%

“…Apart from CER, quantum transport has also attracted the attention of many researchers in recent decades. [23][24][25] Among them, weak localization (WL), weak anti-localization (WAL) and their crossover are widely found and studied in topological insulators. WL and WAL extraordinary dependence on external forces such as magnetic elds and temperature is a fascinating scientic question.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Mn doping on electronic and quantum transport in PbPdO₂ thin films

Zeng,

Guo,

Jia

et al. 2024

RSC Adv.

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Section: Resultsmentioning

confidence: 99%

Section: Quantum Transport Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects of Mn doping on electronic and quantum transport in PbPdO₂ thin films

Zeng,

Guo,

Jia

et al. 2024

RSC Adv.

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“…Figures 3(a larger than the surface to bulk scattering time, substantial 191 surface-bulk scattering will occur and the sample will have a 192 single transport channel with α = −0.5. On the other hand, if 193 the surface to bulk scattering time is large in comparison to the 194 phase decoherence time, the top and bottom surfaces will be 195 decoupled and each contribute −0.5 to the conduction, result-196 ing in α = −1.0 [20][21][22]25,26,37,38]. In the 23-nm samples, 197 α = −0.5, indicating the surface and bulk are coupled and 198 behave as a single transport channel.…”

Section: Resultsmentioning

confidence: 99%

Increased phase coherence length in a porous topological insulator

Nguyen

Akhgar

Cortie

et al. 2023

Phys. Rev. Materials

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The surface area of Bi 2 Te 3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surfacelike. Weak antilocalization was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics.

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“…This preferential deflection of the electrons from the scattering events at defects or scattering from adjacent wave functions leads to the appearance of Hall voltage or magnetoconductance. The action of magnetic forces on the transport properties of semiconductors, metals, and also of superconducting materials in the normal conducting regime [1][2][3][4][5] has been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Low-Temperature Magnetotransport Properties of NbN Thin Films Grown by Atomic Layer Deposition

et al. 2022

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Superconducting niobium nitride (NbN) films with nominal thicknesses of 4 nm, 5 nm, 7 nm, and 9 nm were grown on sapphire substrates using atomic layer deposition (ALD). We observed probed Hall resistance (HR) (Rxy) in external out-of-plane magnetic fields up to 6 T and magnetoresistance (MR) (Rxx) in external in-plane and out-of-plane magnetic fields up to 6 T on NbN thin films in Van der Pauw geometry. We also observed that positive MR dominated. Our study focused on the analysis of interaction and localisation effects on electronic disorder in NbN in the normal state in temperatures that ranged from 50 K down to the superconducting transition temperature. By modelling the temperature and magnetic field dependence of the MR data, we extracted the temperature-dependent Coulomb interaction constants, spin–orbit scattering lengths, localisation lengths, and valley degeneracy factors. The MR model allowed us to distinguish between interaction effects (positive MR) and localisation effects (negative MR) for in-plane and out-of-plane magnetic fields. We showed that anisotropic dephasing scattering due to lattice non-idealities in NbN could be neglected in the ALD-grown NbN thin films.

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Quantum interference phenomena and electron – electron interaction in topological insulator Bi2Se3 thin polycrystalline films

Cited by 7 publications

References 54 publications

Effects of Mn doping on electronic and quantum transport in PbPdO₂ thin films

Effects of Mn doping on electronic and quantum transport in PbPdO₂ thin films

Increased phase coherence length in a porous topological insulator

Analysis of Low-Temperature Magnetotransport Properties of NbN Thin Films Grown by Atomic Layer Deposition

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Quantum interference phenomena and electron – electron interaction in topological insulator Bi2Se3 thin polycrystalline films

Cited by 7 publications

References 54 publications

Effects of Mn doping on electronic and quantum transport in PbPdO2 thin films

Effects of Mn doping on electronic and quantum transport in PbPdO2 thin films

Increased phase coherence length in a porous topological insulator

Analysis of Low-Temperature Magnetotransport Properties of NbN Thin Films Grown by Atomic Layer Deposition

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Effects of Mn doping on electronic and quantum transport in PbPdO₂ thin films

Effects of Mn doping on electronic and quantum transport in PbPdO₂ thin films