Quantum Emitters with Narrow Band and High Debye–Waller Factor in Aluminum Nitride Written by Femtosecond Laser

Wang, Xiaojie; Fang, Hong‐Hua; Xing, Renhao; Chai, Yuan; Li, Xiao-Ze; Zhou, Yun-Ke; Zhang, Yan; Huang, Guan-Yao; Hu, Cong; Sun, Hong–Bo

doi:10.1021/acs.nanolett.3c00019

Cited by 11 publications

(3 citation statements)

References 41 publications

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“…Recent work has shown the role of Al-ion implantation and subsequent thermal annealing up to 600 • C in the formation of individual color centers in the 550-650 nm range, indicating that their structural configuration can be achieved by the controlled introduction of radiation-induced lattice damage and thus offering a convenient pathway for their manufacturing [163]. Such findings are in line with the demonstration of the deterministic fabrication of single color centers by fs laser-induced damage in AlN on sapphire films [164]. These results, along with the theoretical prediction of point defects with optically addressable spin properties, similar to those of the NV center in diamond [165], highlight the potentially seamless integration of AlN emitters into integrated platforms for quantum photonics [166,167].…”

Section: Nitridesmentioning

confidence: 63%

Solid-State Color Centers for Single-Photon Generation

Andrini,

Amanti,

Armani

et al. 2024

Photonics

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Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

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Section: Nitridesmentioning

confidence: 63%

Solid-State Color Centers for Single-Photon Generation

Andrini,

Amanti,

Armani

et al. 2024

Photonics

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“…The laser etching of 2D materials provides a direct writing technique to create high-resolution micropatterns for optoelectronic and photonic devices, such as FET, − quantum emitter, , laser, meta-lens, ,, and light directors Figure (a) shows the optical microscopy image and Raman microscopy image (inset) of an atomic-thin meta-lens by monolayer WSe 2 .…”

Section: Applicationsmentioning

confidence: 99%

Optical Modification of Two-Dimensional Materials: From Atomic to Electronic Scale

Liu,

Lin,

Sun

2024

J. Phys. Chem. C

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Two-dimensional (2D) materials have attracted much attention because of their atomic-thin thickness and unique properties, such as high binding energy, tunable band gap, and new electronic degrees of freedom (valleytronics). They have found many applications in microelectronics, nanophotonics, nano energy, and so on. In the past decade, various 2D devices have been developed, including field effect transistor (FET), nano light source, photodetector, supercapacitors, etc. However, the application of 2D materials is still limited by their intrinsic properties, e.g., the low carrier concentration, high contact resistance at heterogeneous interface, and the challenge of thickness control in transition metal dichalcogenides. It remains an alluring perspective to tune the geometry and electronic and photonic properties of 2D materials on demand. Specifically, laser modification is a contactless processing technique with high accuracy, high efficiency, and versatility due to the flexibility to manipulate light at high spatiotemporal resolution. Here, we review the light−matter interaction during laser modification of 2D materials. The cutting-edge optical techniques to modify the geometry, the composition, and the electronic structure are summarized. Moreover, we discuss the applications of such optical techniques in various 2D devices. The understanding of the underlying physics and the tunable material properties will benefit future technological innovation in laser processing and fabrication of high-performance 2D devices in microelectronics and nanophotonics.

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“…In most color center studies, such vibronic coupling is simply characterized by the Debye-Waller factor or the estimated Huang-Rhys factor [2,[10][11][12][13][14][15]. The former is the ratio of the intensity of the zero phonon line (ZPL) to the intensity of the band, and the latter is approximated as the negative logarithm of the former.…”

Section: Introductionmentioning

confidence: 99%

Extracting phonon coupling parameters from multi color center photoluminescence

Lamelas,

Amaral

2024

J. Opt.

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Vibronic coupling of color centers plays a crucial role in their effectiveness for quantum technologies. This study presents a novel approach to extract key parameters, including the Huang-Rhys factor and the one-phonon coupling function, from photoluminescence spectra containing the signal from multiple color centers. Monotonic splines are used to represent the one-phonon coupling function, optimized using a variable-length non-dominated sorting genetic algorithm.Our method is applied to the combination of the well-studied negatively charged nitrogen-vacancy center and its less explored neutral counterpart in diamond, observed through photoluminescence at 14 K. Despite the complexity inherent in the theoretical framework governing phonon coupling in photoluminescence, we achieve robust fits, yielding a normalized root-mean-squared error of approximately 6 %. The neutral nitrogen-vacancy center exhibits a Huang-Rhys factor of 3.0, while its negatively charged counterpart showcases a value of 3.95. The quasi-localized vibrations of both charge states are clearly present in the fitted one-phonon spectral function. Furthermore, the consistency of our methodology is bolstered by temperature-dependent photoluminescence, which was calculated up to numerical constants using fit-derived parameters, matching the experimental measurements up to 300 K.

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Quantum Emitters with Narrow Band and High Debye–Waller Factor in Aluminum Nitride Written by Femtosecond Laser

Cited by 11 publications

References 41 publications

Solid-State Color Centers for Single-Photon Generation

Solid-State Color Centers for Single-Photon Generation

Optical Modification of Two-Dimensional Materials: From Atomic to Electronic Scale

Extracting phonon coupling parameters from multi color center photoluminescence

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