Quantum dots in InAs nanowires induced by surface potential fluctuations

Weis, K.; Wirths, Stephan; Winden, A.; Sladek, Kamil; Hardtdegen, H.; Lüth, H.; Grützmacher, Detlev; Schäpers, Thomas

doi:10.1088/0957-4484/25/13/135203

Cited by 10 publications

(12 citation statements)

References 28 publications

(49 reference statements)

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“…Similar behaviour has been observed in several of our devices of the same type and unwanted QDs have as well been reported in previous study, despite the high quality of the NWs used [16,37,38]. It is believed to be caused by defects [39] and potential fluctuations at the surface of the NW [40] which can be triggered by chemical and/or plasma treatments of the NW. One reason for their presence comes from the fabrication process:…”

Section: Characterization Of the Devicessupporting

confidence: 90%

InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

et al. 2016

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We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium cover shell and they behave as metallic single-electron transistors. In contrast to the typical few channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and thus provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices, and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

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Section: Characterization Of the Devicessupporting

confidence: 90%

InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

et al. 2016

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“…The effect of the presence of fixed charges at the silicon/insulator interface of the nanowire sidewall in terms of band bending [37,38] was investigated with the simulation software nextnano 3 [39]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Field-effect passivation on silicon nanowire solar cells

et al. 2014

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Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO 2 /SiN x stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

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“…[24,25]. Crucially, because the 2DEG is highly exposed to the surface, the charge distribution and thereby conduction can also be influenced by charged species adsorbed to the outside surface of the nanowire.…”

Section: Discussionmentioning

confidence: 99%

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

et al. 2017

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Abstract. We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N 2 and O 2 , and N 2 bubbled through liquid H 2 O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2 − 3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

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Quantum dots in InAs nanowires induced by surface potential fluctuations

Cited by 10 publications

References 28 publications

InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

Field-effect passivation on silicon nanowire solar cells

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

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