1995
DOI: 10.1038/378258a0
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Quantum confinement and light emission in SiO2/Si superlattices

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Cited by 613 publications
(324 citation statements)
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“…This behavior is in contrast to the blue shift that has been previously reported for porous Si [81,95], SiO 2 /Si superlattices [96], and for Si nanoclusters [28] and attributed to quantum confinement. A red shift has, however, been reported for 2 and 3 nm diameter silicon clusters formed upon annealing SiO 2 superlattices by Zimina et al [97], although changes in the absorption spectrum were much less pronounced than those reported here.…”
Section: Xas Of Silicon Nanostructurescontrasting
confidence: 53%
See 1 more Smart Citation
“…This behavior is in contrast to the blue shift that has been previously reported for porous Si [81,95], SiO 2 /Si superlattices [96], and for Si nanoclusters [28] and attributed to quantum confinement. A red shift has, however, been reported for 2 and 3 nm diameter silicon clusters formed upon annealing SiO 2 superlattices by Zimina et al [97], although changes in the absorption spectrum were much less pronounced than those reported here.…”
Section: Xas Of Silicon Nanostructurescontrasting
confidence: 53%
“…Most of the PL can be explained by quantum-confinement mechanism [28], Si/SiO 2 multilayer quantum wells [96]. According to the extended version of this mechanism, the larger bandgap of the Si NCs is attributed to quantum-confined Si nanostructures where the recombination of electrons and holes occurs in surface states [108].…”
Section: Xeol Of Si Nanocrystalsmentioning
confidence: 99%
“…However, because of the growing concern over environmental issues, light emitting diodes (LEDs) using Si have recently been investigated. For example, in the visible region, porous Si [68] , silicon/silicon dioxide (Si/SiO 2 ) superlattice structures [69,70] , and Si nanoprecipitates in SiO 2 [71] have been used, and in the infrared region, erbium-doped Si [72] and silicon-germanium (Si-Ge) [73] have been used. However, their emission effi ciencies are still lower than 1 % [74] .…”
Section: Electrical To Optical Energymentioning
confidence: 99%
“…Recent research shows that SrTiO 3 , HfO 2 and TiO 2 materials are the most promising candidates to SiO 2 replacement in development of new semiconductors devices. With the advances in the growth of SrTiO 3 on silicon by epitaxy [2], the development of quantum confinement based optical devices is possible, following the steps of an original suggestion and demonstration of light emission in Si/SiO 2 quantum wells (QWs) [3,4], by simple replacement of silicon dioxide by SrTiO 3 . The understanding of the atomic structure at the silicon/oxide interface is still not complete.…”
Section: Introductionmentioning
confidence: 99%