Quantum beats of electron Larmor precession in GaAs wells

Heberle, A. P.; Rühle, W. W.; Ploog, K.

doi:10.1103/physrevlett.72.3887

Cited by 197 publications

(128 citation statements)

References 13 publications

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“…Time-resolved photoluminescence detects, after creation of spin-polarized carriers, circular polarization of the recombination light. This technique was used, for example, to detect a 500-ps spin coherence time T 2 of free excitons in a GaAs quantum well (Heberle et al, 1994). The Faraday and (magneto-optic) Kerr effects are the rotation of the polarization plane of a linearly polarized light, transmitted through (Faraday) or reflected by (Kerr) a magnetized sample.…”

Section: Experimental Probesmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: Experimental Probesmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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“…We use spin quantum beat spectroscopy 15,16 to investigate the spin dynamics of symmetric (001) quantum wells with a variable potential gradient produced by an external electric field applied along the growth axis. The sample contains two different quantum well widths which allows the effect of electron confinement energy on the spin dynamics to be studied.…”

Section: Introductionmentioning

confidence: 99%

Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

et al. 2013

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Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate s and the electron Landé g factor g * to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D 2d → C 2v ). However, by looking at the anisotropy of both s and g * simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest.

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“…A well-known manifestation of spin coherence is the beating of timeand polarization-resolved photoluminescence due to precession of electron spins about an applied magnetic field. 2 Because this type of beating involves the spins of recombining charges, the observable duration is limited to the charge recombination time. Spin coherence detected using time-resolved absorption 3 or Faraday rotation 4 (FR) can in principle be monitored over arbitrary long time scales in doped semiconductors and heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

et al. 2001

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Time-resolved optical measurements of electron-spin dynamics in a (110) GaAs quantum well are used to study the consequences of a strongly anisotropic electron gtensor, and the origin of previously discovered all-optical nuclear magnetic resonance.All components of the g-tensor are measured, and a strong anisotropy even along the inplane directions is found. The amplitudes of the spin signal allow the study of the spatial directions of the injected spin and its precession axis. Surprisingly efficient dynamic nuclear polarization in a geometry where the electron spins are injected almost transverse to the applied magnetic field is attributed to an enhanced non-precessing electron spin component. The small absolute value of the electron g-factor combined with efficient nuclear spin polarization leads to large nuclear fields that dominate electron spin precession at low temperatures. These effects allow for sensitive detection of all-optical nuclear magnetic resonance induced by periodically excited quantum-well electrons. The mechanism of previously observed ∆m = 2 transitions is investigated and found to be attributable to electric quadrupole coupling, whereas ∆m = 1 transitions show signatures of both quadrupole and electron-spin induced magnetic dipole coupling.

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Quantum beats of electron Larmor precession in GaAs wells

Cited by 197 publications

References 13 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

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