MRS Proc. 2000 DOI: 10.1557/proc-610-b4.10 View full text
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M. S. Carroll, J. C. Sturm

Abstract: During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I * , versus depth above buried Si 0.795 Ge 0.2 C 0.005 layers during oxidation. The average interstitial supersaturation at the silicon surface, extrapolated from the depth profiles, is measured as, ~24 and ~11.5 for 750°C and 850°C…

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