Quantitative interpretation of the excitonic splittings in aluminum nitride

Gil, Bernard; Guizal, Brahim; Felbacq, Didier; Bouchitté, Guy

doi:10.1051/epjap/2010100448

Cited by 11 publications

(10 citation statements)

References 28 publications

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“…This is important if one wants to apply the method for calculating shallow acceptors which have binding energies of this order of magnitude. For AlN, Gil 21,22 recently reviewed how well the A 1 ,A 2 parameters fit the experimental data on the 1s − 2s exciton splitting. In order to obtain a good fit, he found it is important to also include the anisotropy of the dielectric constants.…”

Section: Discussionmentioning

confidence: 99%

Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistentGWband structures

Punya

Lambrecht

2012

Phys. Rev. B

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We present band gaps, electron effective masses and valence band effective mass Hamiltonian parameters as well as strain deformation potentials of the crystal field splittings for AlN, GaN and InN obtained from quasiparticle self-consisent GW calculations. Excellent agreement is obtained with experimental data for the crystal field and spin-orbit coupling splittings of bulk AlN and GaN. For InN, the discrepancy on the crystal field splitting is likely due to the residual strain in InN thin films from which that experimental value was extracted. We obtain a negative spinorbit splitting for InN, which is plausible in view of the stronger negative contribution of In-4d in InN than Ga-3d in GaN. The inverse effective mass parameters Ai agree well with previous G0W0 calculations except for A6. We find that the A6 parameter describing the band dispersion in directions intermediate between in-and perpendicular to the basal plane is not well described by the quasicubic approximation. Good agreement with the most reliable experimental data is obtained for hole effective mass parameters in AlN and GaN, extracted from exciton binding energies and their fine structure. For InN and GaN, the spin-splittings of the bands in the plane due to spin-orbit coupling requires the inclusion of linear in k and spin terms.

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Section: Discussionmentioning

confidence: 99%

Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistentGWband structures

Punya

Lambrecht

2012

Phys. Rev. B

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“…This enhancement is correlated with the enhancement of the coupling of the 3d 0 state with the ns ones when increasing the anisotropy that is to say when reducing g. consistent with each other. This was nicely interpreted, mutatis mutandis, in the context of a model that was fruitfully applied to GaN [4,5]. The important difference is that the topmost valence band has G 7 symmetry whatever the strain is.…”

Section: Eigenvaluesmentioning

confidence: 93%

“…Fortunately, there have been experimental measurements of the dielectric constants, and effective-mass calculations both of which have been published recently. In a couple of recent papers [5,10], we have proposed analytical expressions for the g-induced modification of both the 1s binding energy and for the modification of the 1s-2s splitting. This furnished some analytical correlations between the values of inplane, and on-axis electron and hole effective masses, dielectric constants, depending on g and on the 1s-2s splitting [5,11].…”

Section: Eigenvaluesmentioning

confidence: 99%

“…In a couple of recent papers [5,10], we have proposed analytical expressions for the g-induced modification of both the 1s binding energy and for the modification of the 1s-2s splitting. This furnished some analytical correlations between the values of inplane, and on-axis electron and hole effective masses, dielectric constants, depending on g and on the 1s-2s splitting [5,11]. The results indicated that the dielectric constant has to be chosen anisotropic, with values e ?…”

Section: Eigenvaluesmentioning

confidence: 99%

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Excitonic states and their wave functions in anisotropic materials: A computation using the finite‐element method and its application to AlN

Gil

Felbacq

Guizal

et al. 2012

Physica Status Solidi (b)

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We have computed the excitonic states in the case of cylindrical symmetry as a function of the anisotropy using the finiteelement method. The wave functions are also obtained and are presented for m ¼ 0, the states coupled with the electromagnetic fields. We illustrate for instance that the state dominantly built from the 3d 0 hydrogenic level has a non-vanishing oscillator strength when the anisotropy increases. As an illustration we conclude our message by the application of that calculation to the interpretation of the 1s-2s splitting in the specific case of aluminum nitride using the predictions of very recent bandstructure calculations.

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“…33,34 To obtain quantitative results for ε ∞ , the low-energy part of ε 1 in the transparent region of AlN has to be analyzed, i.e., where ε 2 is zero. In this energy range, ε 1 equals the square of the refractive index.…”

Section: B High-frequency and Static Dielectric Constantsmentioning

confidence: 99%

Anisotropic absorption and emission of bulk(11¯00)AlN

et al. 2013

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The intrinsic anisotropic optical properties of wurtzite AlN are investigated in absorption and emission. Full access to the anisotropy of the optical response of the hexagonal material is obtained by investigating the (1100) plane of a high-quality bulk crystal allowing electric field E polarization perpendicular (E ⊥ c) and parallel (E c) to the optical axis c. Spectroscopic ellipsometry yields the ordinary (ε ⊥ ) and extraordinary (ε ) dielectric functions (DFs) from 0.58 up to 20 eV. The comparison of the experimental data with recently calculated DFs demonstrates that Coulomb interaction has a strong impact not only on the spectral dependence around the fundamental absorption edge but also on the high-energy features usually discussed in terms of van Hove singularities. The fits of the second-order derivatives of ε and ε ⊥ provide the transition energies for the main features in this range. The DFs close to the fundamental absorption edge, dominated by free excitons, exciton-phonon complexes, and the exciton continuum, are independently confirmed by reflectivity and synchrotron-based photoluminescence excitation studies. Values for the band gaps, the crystal field ( cf = −221 ± 2 meV), and spin-orbit splittings ( so = 13 ± 2 meV) are obtained. Furthermore, we obtain accurate values for the static dielectric constants of ε S⊥ = 7.65 and ε S = 9.21, entering, e.g., the calculations of exciton binding energies. Photoluminescence is used to investigate the emission properties of the same sample.

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Quantitative interpretation of the excitonic splittings in aluminum nitride

Cited by 11 publications

References 28 publications

Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistentGWband structures

Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistentGWband structures

Excitonic states and their wave functions in anisotropic materials: A computation using the finite‐element method and its application to AlN

Anisotropic absorption and emission of bulk(11¯00)AlN

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