2021
DOI: 10.1038/s41563-021-01008-0
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Quantifying charge carrier localization in chemically doped semiconducting polymers

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Cited by 75 publications
(138 citation statements)
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“…uses the overlap of Coulomb potentials of neighboring ionized dopants to define a dopant concentration c D dependent activation barrier W H (c D ) for transport. [ 34 ] Before, the same idea was explored by Arkhipov et al., c.f. Equation (1) in ref.…”
Section: Introductionmentioning
confidence: 99%
“…uses the overlap of Coulomb potentials of neighboring ionized dopants to define a dopant concentration c D dependent activation barrier W H (c D ) for transport. [ 34 ] Before, the same idea was explored by Arkhipov et al., c.f. Equation (1) in ref.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, σ E0 is often regarded as a weighed mobility prefactor [ 41 ] or, in other models, to the sample's homogeneity and maximum conductivity of a given conductive domain. [ 42 ] Experimental results show that this value is higher in ordered or even oriented materials regardless of the interpretation chosen. Thus, in principle, it can serve as a proxy for the degree of connectivity between conductive domains and structural order.…”
Section: Resultsmentioning
confidence: 99%
“…Fortunately, the understanding of charge transport and the development of physical models are underway and some models with considerable accuracy and versatility have been developed, which is believed to be beneficial to the improvement of device and circuit modeling. 109 Second, the device variation and the resultant mismatch in circuits are challenged to be fundamentally solved. Different from doing research in lab, the realworld application of organic integrated circuits requires device-to-device, batch-to-batch uniformity and stability, which puts forward higher requirements on the material synthesis, purification, and process standardization.…”
Section: Discussionmentioning
confidence: 99%