Publisher’s Note: Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Pb</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>Sn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi>Se</mml:mi></mml:mrow></mml:math>[Phys. Rev. Lett.<b>113</b>, 096401 (2014)]

Xi, Xiaoxiang; He, Xu-Gang; Guan, Fen; Liu, Zhenxian; Zhong, Ruidan; Schneeloch, John; Liu, T. S.; Gu, Genda; Du, Xiaoqun; Chen, Z.; Hong, Xinguo; Ku, Wei; Carr, G. L.

doi:10.1103/physrevlett.113.179902

Cited by 10 publications

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“…In fact, a pressure-induced topological phase transition has been recently observed and studied in this material. 7 So, apart from determining the optical and transport properties, this study also attempts to investigate such a possibility in a Pb 0.77 Sn 0.23 Se single crystal.…”

Section: Introductionmentioning

confidence: 99%

Temperature-driven band inversion inPb0.77Sn0.23Se: Optical and Hall effect studies

et al. 2014

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Optical and Hall-effect measurements have been performed on single crystals of Pb0.77Sn0.23Se, a IV-VI mixed chalcogenide. The temperature dependent (10-300 K) reflectance was measured over 40-7000 cm −1 (5-870 meV) with an extension to 15,500 cm −1 (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via KramersKronig analysis as well as by a Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the lowenergy optical spectra. It is found that the valence-conduction band transition energy as well as the free-carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density functional theory calculation for the electronic band structure are also presented.

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Section: Introductionmentioning

confidence: 99%

Temperature-driven band inversion inPb0.77Sn0.23Se: Optical and Hall effect studies

et al. 2014

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“…Although very challenging, such an experiment is feasible, as shown by pressure studies of infrared reflectivity in the closely related Pb 1−x Sn x Se TCI mixed crystals. 23…”

Section: Discussionmentioning

confidence: 99%

Alloy broadening of the transition to the non-trivial topological phase of Pb_{1-x}Sn_{x}Te

Lusakowski,

Boguslawski,

Story

2018

Preprint

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Transition between the topologically trivial and non-trivial phase of Pb1−xSnxTe alloy is driven by the increasing content x of Sn, or by the hydrostatic pressure for x < 0.3. We show that a sharp border between these two topologies exists in the Virtual Crystal Approximation only. In more realistic models, the Special Quasirandom Structure method and the supercell method (with averaging over various atomic configurations), the transitions are broadened. We find a surprisingly large interval of alloy composition, 0.3 < x < 0.6, in which the energy gap is practically vanishing. A similar strong broadening is also obtained for transitions driven by hydrostatic pressure. Analysis of the band structure shows that the alloy broadening originates in splittings of the energy bands caused by the different chemical nature of Pb and Sn, and by the decreased crystal symmetry due to spatial disorder. Based on our results of ab initio and tight binding calculations for Pb1−xSnxTe we discuss different criteria of discrimination between trivial and nontrivial topology of the band structure of alloys.

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“…In principle, the phase transitions between topological trivial and non-trivial states can be achieved by the external perturbations such as the tuning the electro-negativity or tuning the strength of spin-orbit coupling (SOC) via substituting proper elements 1,2,10 , by alloying composition or chemical doping [28][29][30] or by * both authors have equal contribution uniform hydrostatic pressure, and strain. Pressure induced topological phase transition have been identified in layered materials 31 , BiTeI 32,33 , Pb 1−x Sn x 34 , polar semiconductors BiTeBr 35 , topological crystalline insulators 36 , rocksalt chalcogenides 37 , chalcopyrite compounds like CdGeSb 2 and CdSnSb 2 38 .…”

Section: Introductionmentioning

confidence: 99%

Pressure driven topological phase transition in chalcopyrite ZnGeSb$_2$

Sadhukhan¹,

Sadhukhan²,

Kanungo³

2022

Preprint

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Recently topologically non-trivial phases have been identified in few time-reversal invariant systems that lack of inversion symmetry. Using density functional theory based first-principles calculations, we report a strong topologically non-trivial phase in chalchopyrite ZnGeSb2, which can act as a model system of strained HgTe. The calculations reveal the non-zero topological invariant (Z2), the presence of Dirac cone crossing in the surface spectral functions with spin-momentum locking. We also show that the application of moderate hydrostatic pressure (∼7 GPa) induces topological phase transition from topological non-trivial phase to a topologically trivial phase. A discontinuity in the tetragonal distortion of non-centrosymmetric ZnGeSb2 plays a crucial role in driving this topological phase transition.

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Publisher’s Note: Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions inPb1−xSnxSe[Phys. Rev. Lett.113, 096401 (2014)]

Cited by 10 publications

References 0 publications

Temperature-driven band inversion inPb0.77Sn0.23Se: Optical and Hall effect studies

Temperature-driven band inversion inPb0.77Sn0.23Se: Optical and Hall effect studies

Alloy broadening of the transition to the non-trivial topological phase of Pb_{1-x}Sn_{x}Te

Pressure driven topological phase transition in chalcopyrite ZnGeSb$_2$

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