DOI: 10.1109/isscc.1979.1155894
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Abstract: A DUAL-GATE GaAs FET may be switched from an amplifying state to an attenuating state at RF frequencies by changing the bias voltage in the second gate. The on-off ratio of over 40dBcan be attained at X-band frequencies with a switching speed of less than Ins. This property of the dual-gate FET may be utilized for amplitude modulation, automatic gain control, hi h speed switching, and phase modulation at RF frequencies' J.-h this paper, a bi-phase modulator using dual-gate FETs in a switchedline configuration…

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