Pseudobinary Solid‐Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP–ZnSe

Abstract

Bandgap engineering of semiconductor nanostructures is of significant importance either for the optical property tailoring or for the integration of functional optoelectronic devices. Here, an efficient way to control the bandgap and emission wavelength is reported for a binary compound semiconductor through alloying with another binary compound. Taking GaP‐ZnSe system as an example, the bandgap of quaternary GaP‐ZnSe solid‐solution nano­wires can be selectively tailored in the range of 1.95–2.2 eV by controlling the solubility of ZnSe dopants in GaP host. High‐resolution transmission electron microscopy measurement and chemical analyses using an X‐ray energy dispersive spectrometer (EDS) demonstrate the solid‐solution feature of GaP‐ZnSe semiconductor alloy, while X‐ray photoelectron spectroscopy (XPS) characterization verifies the formation of some new chemical bonds corresponding to Zn‐P and Ga‐S bonds in GaP‐ZnSe nanowires. The strategy to tailor the optoelectronic property of semiconductor nanostructures through the solid‐solution of two different binary compounds represents a general routine to the property modification of all pseudobinary systems and will open more opportunity for their applications in electronics, optics and optoelectronics.

Atomic arrangement matters: band-gap variation in composition-tunable (Ga1–xZnx)(N1–xOx) nanowires

“…Moreover, the lattice fringes in the nanowires are regularly spaced and defect free, confirming the excellent crystal quality of the (Ga 1-x Zn x )(N 1-x O x ) nanowires. 41,48,49 This result is further verified by the fast Fourier transform patterns, since no overlapping or splitting of diffraction spots is observed (Figures S2F-S2J). The four constituent elements, including Zn, O, Ga, and N, are homogeneously distributed across and along the ZnO-rich nanowire at the nanoscale, according to the EDS element mapping (Figure 3C and Table S1) and line-scan profiling (Figures 3D and 3E).…”

Layered crystalline ZnIn 2 S 4 nanosheets: CVD synthesis and photo-electrochemical properties

“…In this case, four elements including In, P, Zn and S are involved and they can provide large possibilities for the formation of binary, ternary or even quaternary compounds such as ZnS, InP, In 2 S 3 , Zn 3 P 2 , (Zn, In)S, (Zn, In)P, Zn(S, P), In(S, P), and (ZnS) (InP). [39][40][41][42] In 2 S 3 bundles decorated with In 2 O 3 nanoparticles with the existence of oxygen in the reaction chamber have been reported. 43 In fact, we have demonstrated the versatility and possibility of a multicomponent system in the composition and morphology tailoring of different nanostructures.…”

“…40,42 Similarly, GaP-ZnSe pseudobinary solid-solution nanowires and In 2 S 3 /In 2 O 3 heterostructures have been obtained using the same synthetic strategy. 39,43 Hence, it is definitely essential to investigate the chemical composition of the nanosheets and their possible impurity doping. Elementary analysis on the nanosheet verifies that it is composed of Zn, In and S elements, and the possible contamination from P atoms is not observed, suggesting the chemical purity of the nanosheets (Fig.…”

2D/2D Molybdenum Sulfo Selenides/Black Phosphorus Heterostructures for Supercapacitors and Light‐Driven Hydrogen Generation Applications

“…[ 45 ] Similarly, the peak at 56 eV represents the Se─P bonding (Figure 3c). [ 46 ] Finally, the deconvoluted XPS spectra of P 2p (Figure 3d) show a prominent peak at 133.2 representing P−S bonding. The other two peaks at 134.4 and 133.6 eV represent the formation of phosphorus oxide probably produced when exposed to air.…”