Prototype Inductive Adders With Extremely Flat-Top Output Pulses for the Compact Linear Collider at CERN

Abstract

The compact linear collider (CLIC) study is exploring the scheme for an electron-positron collider with high luminosity and a nominal center-of-mass energy of 3 TeV. The CLIC predamping rings (DRs) and DRs will produce, through synchrotron radiation, ultralow emittance beam with high bunch charge, necessary for the luminosity performance of the collider. To limit the beam emittance blow-up due to oscillations, the pulse generators for the DR kickers must provide extremely flat, high voltage, pulses. The specifications for the DR extraction kickers call for a 160-or 900-ns duration flat-top pulse of ±12.5 kV, with a combined ripple and droop of not more than ±0.02% (±2.5 V) for each pulse: an inductive adder is a very promising approach to meet the specifications. Recently, the first 20 layer, 12.5 kV, full-scale prototype inductive adder has been assembled at CERN and testing has commenced. This paper presents flat-top stability and repeatability measurements of the output waveforms of this full-scale prototype inductive adder for CLIC DR kicker systems. The pulse waveforms have been recorded with an oscilloscope which has nominally 16-bit resolution and allows measurements of minimum and maximum envelope curves for a large number of consecutive output waveforms. Both passive and active modulation methods have been applied to improve the relative flat-top stability of the prototype inductive adder to meet the specification of ±0.02%.

A low characteristic impedance quasi-rectangular pulser based on solid-state inductive adder for High rEpetition rate Muon Source at CSNS

“…Inductive adder is a relatively new scheme of pulse power generation, which is typically composed of N single-turn transformers with a common secondary winding to generate the required pulse power [2][3][4][5][6][7][8]. Especially recently, inductive adder pulsers using solid-state semiconductor power devices, such as insulated-gate bipolar transistors (IGBTs) [9] and metal-oxide-semiconductor field-effect transistors (MOSFETs) [8,[10][11][12][13][14], have been developed.…”

Off-the-Shelf Diodes as High-Voltage Opening Switches

“…A modification of the components was, however, implemented to increase the initially stored energy and, thereby, voltage amplitude across the load. Here, PT is based on a nanocrystalline magnetic core obtained from Finemet FT-3L, with the magnetic core parameters provided in [23]. The primary winding circuit consists of a film capacitor C1 = 200 nF, a triggered spark gap switch SG, and a single turn primary winding w 1 .…”

Fast injection and extraction kicker system design for High rEpetition rate Muon Source at CSNS

“…The IA adopts coaxial structure, which can be regarded as a coaxial cable with inner conductor (central conductor rod), dielectric material (insulation) and outer conductor (primary winding). Just like a coaxial cable, the breakdown field strength of the dielectric material is 𝐸 max , then the breakdown voltage 𝑉 limit between the primary and secondary windings of IA can be expressed as [28]:…”