2015
DOI: 10.1016/j.enconman.2015.03.035
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Prospects for high-performance thermophotovoltaic conversion efficiencies exceeding the Shockley–Queisser limit

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Cited by 56 publications
(37 citation statements)
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“…If typical sub-band gap and carrier thermalization losses due to above-band gap absorption can be strongly suppressed or even eliminated with this approach, extremely high heat-to-electricity power conversion efficiencies up to 50% could be achieved [28], well in excess of both the singlejunction and tandem-junction Shockley-Queisser limits for PV cells [10]. This would be possible at 1300 ∘ C for band gaps ranging from 0.7 to 1.1 eV, encompassing a wide range of PV materials including GaSb and c-Si [29].…”
Section: Principles Of Selectivitymentioning
confidence: 99%
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“…If typical sub-band gap and carrier thermalization losses due to above-band gap absorption can be strongly suppressed or even eliminated with this approach, extremely high heat-to-electricity power conversion efficiencies up to 50% could be achieved [28], well in excess of both the singlejunction and tandem-junction Shockley-Queisser limits for PV cells [10]. This would be possible at 1300 ∘ C for band gaps ranging from 0.7 to 1.1 eV, encompassing a wide range of PV materials including GaSb and c-Si [29].…”
Section: Principles Of Selectivitymentioning
confidence: 99%
“…The absorption cutoff can be tuned by adjusting the dimensions of the periodic structure, and thus shifting the photonic band gap. Furthermore, PhCs can also enhance absorption via quality factor matching (Qmatching) [29,50,55,56]. According to coupled mode theory [57], a cavity with a resonance frequency ω 0 and absorption quality factor Q abs , and coupled to a radiating mode with a quality factor Q rad has an absorption spectrum given by the following:…”
Section: Phc Selective Solar Absorbersmentioning
confidence: 99%
“…Finite difference time-domain (FDTD) 38 and current transport simulations have shown that an IPSE enables system conversion efficiencies to reach up to 41.8%, using the realistic model for GaSb PV diodes, by nearly eliminating sub-bandgap emission. This corresponds to showing that the 10.9% gap from the ideal efficiency value observed in previous work 39 can now be reduced to 4.3% using IPSEs. Arguably, the IPSE creates a nonzero chemical potential for photon emission using a purely thermal input source, which is a fundamentally distinctive physical behavior akin to light-emitting diodes.…”
Section: Introductionmentioning
confidence: 99%
“…Overall, the efficiency gap from the ideal case is substantially reduced to 4.3%, which is less than two-fifths of the original gap previously seen in the literature. 39 Assuming the presence of a large-area passive heat sink with convective and radiative cooling available on its outer surface, the best IPSE design leaves the temperature of the PV diode at 1.5 K above ambient when illuminated. It was also assumed that the PV diode has zero series resistance.…”
Section: Integrated Photonic Crystal Selective Emitter With Chirped Qmentioning
confidence: 99%
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