2005
DOI: 10.1016/j.jcrysgro.2004.10.026
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Properties of transparent conductive ZnO:Al films prepared by co-sputtering

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Cited by 110 publications
(53 citation statements)
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“…They feature a wide band gap non-stoichiometric n-type semiconductor with a low resistivity and high transmittance in the visible region. Therefore, transparent conducting zinc oxide films are promising alternatives to ITO [1]. ZnO is used as a transparent conductor material in solar cells and is a promising material for transparent transistors, which can be used in a variety of consumer products [2][3][4].…”
Section: Introductionmentioning
confidence: 99%
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“…They feature a wide band gap non-stoichiometric n-type semiconductor with a low resistivity and high transmittance in the visible region. Therefore, transparent conducting zinc oxide films are promising alternatives to ITO [1]. ZnO is used as a transparent conductor material in solar cells and is a promising material for transparent transistors, which can be used in a variety of consumer products [2][3][4].…”
Section: Introductionmentioning
confidence: 99%
“…X-ray diffraction measurements of intrinsic biaxial compressive stress and c-axis lattice parameter for AZO films deposited at different H 2 flow ratio(1) …”
mentioning
confidence: 99%
“…The ZnO is one of the most important functional metal oxides for their versatile practical applications, ranging from photodetector (Jun et al 2009), transparent electrode (Oh et al 2005), spintronic devices (Gupta et al 2008), surface acoustic wave devices (Krishnamoorthy and Iliadis 2008), and thin film gas sensors (Tang et al 2006), attributed to their outstanding properties such as wide direct optical band gap, large exciton binding energy, excellent chemical and thermal stability, and excellent piezoelectric properties (Gupta et al 2009). When the ZnO metal oxide is combined with CNT, it is marvelous that, the novel extraordinary properties of ZnO-CNT composite is appear.…”
Section: Introductionmentioning
confidence: 99%
“…Many authors have studied the RF sputtering of ZnO:Al target [10][11][12][13]. Unfortunately, only few studies reported on doping by simultaneous magnetron co-sputtering techniques [14], the most important advantage of this method is the control of the charges carrier concentrations.…”
Section: Introductionmentioning
confidence: 99%