volume 135, issue 3, P238-241 2006
DOI: 10.1016/j.mseb.2006.08.013
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Abstract: The evaluation of structural and electrical properties of the SOI wafers during the silicon layer thinning procedure is discussed in the present report. The SOI wafers were obtained using the technology, which involves bonding and hydrogen-induced transfer of silicon layer onto handle oxidized wafer. Interface between the top silicon layer and the buried oxide is the bonded one. Czochralski grown silicon (Cz-Si) or Float Zone grown silicon (Fz-Si) were used as initial material for SOI. The thickness of silico…

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