Properties of Sb2S3 and Sb2Se3 thin films obtained by pulsed laser ablation

Comparative study of Sb2S3, Bi2S3 and In2S3 thin film deposition on TiO2 by successive ionic layer adsorption and reaction (SILAR) method

“…For example, in Table 2 the results [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] on a wide variety of thin films are presented and compared with the results obtained in this investigation. Regarding In 2 S 3 thin films, it is possible to observe similar features except for a blue-shift on band gap in the SILAR technique.…”

Control of the crystal structure and electrical transport in undoped PbTe films grown by pulsed laser deposition

“…The distance from the target to the substrates was 2 cm. PbTe films having different thicknesses were deposited at 200°C by applying different pulse numbers (deposition times) and keeping other growth parameters constant [16]. The film thicknesses were 40, 80, 120, 400 and 1800 nm (710 nm) which was estimated based on thickness measurements of the films grown on Si substrates.…”

Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

“…The latter substrates were prepared by depositing an Si 3 N 4 buffer layer on Si(111) by PLD. [10][11][12] The Si 3 N 4 layer thickness was 110 nm. The thickness of each lead chalcogenide film was 2 lm.…”