Superlattices and Microstructures volume 38, issue 4-6, P397-405 2005 DOI: 10.1016/j.spmi.2005.08.011 View full text
J.-R. Duclère, M. Novotny, A. Meaney, R. O’Haire, E. McGlynn, M.O. Henry, J.-P. Mosnier

Abstract: We have studied the crystalline, optical and electrical properties of ZnO thin films prepared by pulsed laser deposition and doped with one of the acceptor elements Li, N or P, respectively. To fabricate ZnO:Li material, ZnO layers were epitaxially grown on c-LiNbO 3 substrates, as Li diffusion is expected to occur at high temperatures. The corresponding thin film optical and electrical properties indicated n-type conduction, suggesting the formation of Li interstitial defects. ZnO/ZnO:P 2 O 5 thin films with…

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