Properties of HgCdTe films obtained by laser deposition on a sapphire

Virt, І. S.; Bester, Mariusz; Dumanski, L.; Kuźma, M.; Rudyj, I.O; Frugynskyi, M. S.; Курило, И. В.

doi:10.1016/s0169-4332(01)00232-x

Cited by 5 publications

(3 citation statements)

References 12 publications

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“…The most important practical advantages of this method are: low substrate temperature, good adhesion, high deposition rate, a relatively wide energy range of particles (1-1000 eV). A simplicity of PLA technique was successfully applied for II-VI compounds such as CdTe, HgCdTe, CdS, ZnS, and ZnTe [4,5].…”

Section: Sample Preparationmentioning

confidence: 99%

Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

et al. 2010

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The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and Zn1−xMnxO of different thickness were obtained on Al2O3, glass, and KCl substrates in vacuum of 1 × 10 −5 Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of films was in the range of 0.5-1 µm depending on the number of laser pulses. The structure of target bulk materials was investigated by X-ray diffraction method. A structure of laser deposited films was investigated by the transmission high-energy electron diffraction method. Electric resistivity was measured in the temperature range 77-450 K. The presence of two activation energies in the temperature range 300-330 K and 330-450 K is followed from the analysis of the films electrical resistivity. These activation energies correspond to two deep donor's energy levels. The shallow donor's level is connected with manganese presence. Optical transmission of ZnO and ZnMnO films deposited at various temperatures were investigated.

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Section: Sample Preparationmentioning

confidence: 99%

Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

et al. 2010

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“…The experimental setup used for depositing layers of pentacene using PLD is described in detail in reference [15]. A YAG:Nd 3+ laser, with wavelength 1064 nm and pulse duration 250 µs, was used for the evaporation of the pentacene target.…”

Section: Methodsmentioning

confidence: 99%

Structural and optical properties of layers of pentacene formed by PLD method

et al. 2008

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Abstract:Organic films fabrication offers the possibility of producing electronic devices of low weight, mechanical flexibility and low cost. One suitable material for organic film fabrigation which is the subject of the great interest is pentacene, because it is characterized by the large carrier mobility (∼1 cm 2 /Vs) . In this work, the growth of pentacene layers using pulse laser deposition (PLD) on different substrates (glass/ITO, Si) is described and various processing parameters are investigated . Two pulsed YAG:Nd 3+ laser wavelengths were used for the ablation of the PLD target: the first harmonic at 1064 nm and the second at 532 nm. The structure of the layers formed was examined using SEM and RHEED methods. The results were compared with results of optical spectroscopy studies. It will be shown that layers deposed using second harmonics have a higher quality than those for first harmonic. The other PLD parameters also have a strong influence on the structure quality of layers. 78.66.Qn, 81.15.Fg, 68.37.Hk PACS (2008):

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“…Thin layers of MCT on conducting/nonconducting substrates are normally required for many applications [8]. This material has been grown by different techniques [17][18][19][20][21][22][23]. The thermal evaporation is considered to be a standard and reproducible method for most thin film materials.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and electrical characterization of Hg_xCd_1‐xTe polycrystalline films fabricated by two‐source evaporation technique

Basharat

Hannan

Shah

et al. 2007

Cryst. Res. Technol.

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Two-source thermal evaporation technique was used to prepare Hg x Cd 1-x Te thin films onto scratch free transparent glass substrates. The structural investigations revealed that thin films were polycrystalline in nature. Transmittance measurements in the wavelength range (500-2700 nm) were used to calculate optical constants. The analysis of the optical absorption data showed that the optical band gap was of indirect type. In the composition range 0.05< x < 0.25 the films exhibited an optical band gap between 1.29 and 0.98 eV. In the same composition range the films were p-type and exhibited a resistivity, which varied between 10 2 and 10 -1 Ω-cm.

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Properties of HgCdTe films obtained by laser deposition on a sapphire

Cited by 5 publications

References 12 publications

Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

Structural and optical properties of layers of pentacene formed by PLD method

Structural, optical and electrical characterization of Hg_xCd_1‐xTe polycrystalline films fabricated by two‐source evaporation technique

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Properties of HgCdTe films obtained by laser deposition on a sapphire

Cited by 5 publications

References 12 publications

Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

Structural and optical properties of layers of pentacene formed by PLD method

Structural, optical and electrical characterization of HgxCd1‐xTe polycrystalline films fabricated by two‐source evaporation technique

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Product

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Structural, optical and electrical characterization of Hg_xCd_1‐xTe polycrystalline films fabricated by two‐source evaporation technique