Proper Electrostatic Modulation of Electric Field in a Reliable Nano-SOI With a Developed Channel

Anvarifard, Mohammad K.; Orouji, Ali A.

doi:10.1109/ted.2018.2808687

Cited by 39 publications

(13 citation statements)

References 12 publications

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“…Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) have been investigated, and there was high interest among the researchers to investigate their electrical performances and scaling of MOSFETs has been reached its limit due to several problems such as the increment of shortchannel-effects, difficulty in define the boundary between the source and drain regions in doping profiles, and the large leakage currents (Ioff) [1][2] [3][4], [5][6] [7]. The structures like double gate, and Fin MOSFETs improve the short-channeleffects and the Ioff current behavior but difficulty in defining the boundary between the source and drain regions in doping profiles still exists [8].…”

Section: Introductionmentioning

confidence: 99%

β-Ga2O3 double gate junctionless FET with an efficient volume depletion region

Madadi

Orouji

2021

Physics Letters A

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Section: Introductionmentioning

confidence: 99%

β-Ga2O3 double gate junctionless FET with an efficient volume depletion region

Madadi

Orouji

2021

Physics Letters A

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“…Moreover, the process variations [5] below 90 nm disturb bias points and hence, affects the linearity of the circuit and degrades resolution. Even though, a lot of MOS improvement techniques such as Junctionless MOS on SOI and other structural modifications has been proposed [7][8][9] but still it is insufficient to withstand the power constraints in resource limited applications. Alternatively, tunnel field effect transistor (TFET) [10] is emerged as a potential descendant for ultra-low power applications because of its better subthreshold swing (SS), small OFF state leakage current and low voltage operation.…”

Section: Introductionmentioning

confidence: 99%

Implementation of ∑Δ ADC using electrically doped III‐V ternary alloy semiconductor nano‐wire TFET

Rajan

Patel

Sharma

et al. 2020

Micro & Nano Letters

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In this work, a fast and low‐power sigma delta )(∑normalΔ analogue‐to‐digital converter (ADC) has been developed using a hetero‐material electrically‐doped nano‐wire tunnel field effect transistor (HM‐ED‐NW‐TFET) for the first time. The better gate controllability of nano‐wire and immunity against process variations of electrically doped tunnel field effect transistor (TFET) enhances resolution. In this regard, the first step that has been performed is the material engineering using normalAlxnormalGa1−xnormalSb/normalGaAs1−yPy, to achieve significant driving current at low subthreshold swing and high InormalON/InormalOFF ratio. Secondly, the mole fraction is optimised to upgrade the critical analogue component – the op‐amp. Also, drain under lapping is included in p‐TFET to bring its characteristics as close to n‐TFET. Latter, the look‐up tables of the proposed device has been generated which is used to develop individual block of ∑normalΔ ADC in Cadence. The blocks are well verified and integrated into final ∑normalΔ ADC and its performance is evaluated. Hence, this work has explored the inherent merits of HM‐ED‐NW‐TFET in the development of low power and fast ∑normalΔ ADC by virtue of a high slew rate op‐amp. Therefore, this work contributes a novel approach to explore the characteristics of emerging devices in mixed signal applications.

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“…The Al composition of graded AlGaN back-barrier layer near the side of GaN main channel is 0.1, and gradually reduces to 0 far away from the main channel. Numerical simulations can support the design of non-conventional devices in a short time, and a large amount of works on devices have been investigated by Atlas-Silvaco physical simulation [24][25][26][27][28][29]. The electron distributions and the conduction band profiles of HEMTs with an Al 0.1 Ga 0.9 N back-barrier and a graded back-barrier are calculated by Atlas-Silvaco physical simulator.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Chang

Sun

et al. 2019

Electronics

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An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

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Proper Electrostatic Modulation of Electric Field in a Reliable Nano-SOI With a Developed Channel

Cited by 39 publications

References 12 publications

β-Ga2O3 double gate junctionless FET with an efficient volume depletion region

β-Ga2O3 double gate junctionless FET with an efficient volume depletion region

Implementation of ∑Δ ADC using electrically doped III‐V ternary alloy semiconductor nano‐wire TFET

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

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