Prominent c-axis oriented Si-doped ZnO thin film prepared at low substrate temperature in RF magnetron sputtering and its UV sensing in p-Si/n-SZO heterojunction structures

Karmakar, Laxmikanta

doi:10.1016/j.jpcs.2020.109907

Cited by 9 publications

(5 citation statements)

References 60 publications

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“…Figure depicts the lattice strain and dislocation densities as calculated using the following equations, , ∈ = β nobreak0em0.1em⁡ cos nobreak0em0.25em⁡ θ 4 , and 0.25em δ = 1 D 2 …”

Section: Resultsmentioning

confidence: 99%

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Reduced Work Function in Anatase ⟨101⟩ TiO₂ Films Self-Doped by O-Vacancy-Dependent Ti³⁺ Bonds Controlling the Photocatalytic Dye Degradation Performance

Das,

Shyam

2024

Langmuir

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TiO 2 has the proven capability of catalytically decomposing pollutants under light illumination, thereby embracing potential applications in wastewater management. The photocatalytic dye degradation activity is largely controlled by the optical band gap that dictates the extent of electron− hole pair generation via photon absorption, and the recombination kinetics of charges. In this context, the material's work function governs how easily the charge carriers can be transferred at the dye-adsorbed photocatalytically active sites. Accordingly, nanocrystalline TiO 2 thin films are grown in the anatase phase with ⟨101⟩ orientation, using RF magnetron sputtering at 200 °C. Besides studying the film's structural morphology, optical band gap, and elemental composition, the electronic properties are extensively investigated. The work function of the material was controlled by varying the O-vacancydependent Ti 3+ bonding configuration in the network. It has been demonstrated how the photocatalytic methylene blue dye degradation activity of the nanocrystalline TiO 2 films of predominantly the anatase phase improves on reducing the sputtering pressure during deposition. At a low deposition pressure of 20 mTorr, a low work function of ∼4.2 eV of the film, resulting from the formation of a Ti 3+ -bond through the O vacancies in the network, potentially increases its carrier lifetime and delivers the superior photocatalytic activity (∼82.7% dye degradation with a rate constant of k ∼ 0.0073 min −1 ) via silently facilitating fast electron transfer from the photocatalyst to the dye in the aqueous solution. The higher stoichiometric film prepared at p = 40 mTorr exhibits an inferior photocatalytic activity (∼20.4% dye degradation with a rate constant of k ∼ 0.0009 min −1 ), as retarded by its higher work function of ∼4.62 eV, despite retaining a relatively low band gap. Thus, without using any heterojunction or extrinsically doped photocatalyst, the dye degradation can be controlled simply by reducing the work function of nanocrystalline TiO 2 thin films via controlling the O-vacancy-dependent Ti 3+ bonding in its self-doped network.

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Section: Resultsmentioning

confidence: 99%

“…Figure depicts the lattice strain and dislocation densities as calculated using the following equations, , …”

Section: Resultsmentioning

confidence: 99%

Reduced Work Function in Anatase ⟨101⟩ TiO₂ Films Self-Doped by O-Vacancy-Dependent Ti³⁺ Bonds Controlling the Photocatalytic Dye Degradation Performance

Das,

Shyam

2024

Langmuir

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“…36-1451), respectively. 7,22,33 The diffraction peaks identified by (#) at 38.42°and 66.65°are indexed as the (200) and (311) planes of the Ag 2 O cubic phases (JCPDS Card No. 41-1104), respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The diffraction peaks [labeled as (*)] emerged at 2θ = 32.06, 34.78, 36.57, 47.86, 56.91, 63.17, 66.58, 68.23, and 69.33° are ascribed to the (100), (002), (101), (102), (110), (103), (200), (112), and (201) planes of wurtzite ZnO (JCPDS Card No. 36-1451), respectively. ,, The diffraction peaks identified by (#) at 38.42° and 66.65° are indexed as the (200) and (311) planes of the Ag 2 O cubic phases (JCPDS Card No. 41-1104), respectively. , The Ag 2 O characteristic peak intensities were relatively feeble due to the presence of Ag 2 O in minute concentration.…”

Section: Resultsmentioning

confidence: 99%

ZnO-Nanorod/Ag₂O-Nanoparticle/rGO-Nanosheet Heterostructures as Photocatalysts for Enhanced Degradation of Harmful Aqueous Phase Contaminants under Extended Visible Light Exposure

Sahu,

Das

2023

ACS Appl. Nano Mater.

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“…These typical 3A group elements serve as shallow donors, supplying one electron each [5]. From the point of a view of the introduction of a new element, silicon has also been shown to be an effective donor in the films fabricated using RF sputtering [6] and may be suitable as an effective dopant to improve various devices [7]. Since Si has atomic size of 1.17 Å, which is similar to or slightly less than Zn, using Si as ZnO film dopant could reduce lattice mismatch [8].…”

Section: Introductionmentioning

confidence: 99%

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

Hong

Kim

Lee

et al. 2023

International Journal of Energy Research

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Si-ZnO thin-film transistors were fabricated using atomic layer deposition (ALD) then annealed in oxygen at 400°C for 1 hour and are demonstrated. Hexagonal wurtzite structure for ZnO was presented in all films, with a primary diffracted peak in the (100) direction regardless of the annealing treatment. First-principle density functional theory (DFT) calculations supported the observed crystalline characteristics. Electrical characteristics were improved with Si doping, increasing carrier concentration to 3.51 × 10 20 c m − 3 and reducing film resistivity to 0.28 × 10 − 1 Ω . cm with well-matched optical bandgap widening from UV-vis results using Tauc plot: Burstein-Moss (BM) effects. After implementing the oxygen ambient annealing and Si doping, the device parameters to realize the low power/energy consumption were improved to an SS value of 0.67 V/decade; threshold voltage ( V th ) of 0.68 V; and a field effect mobility ( μ FE ) of 5.22 cm2/V·s, respectively. The improved device parameters were related to the reduced interface trap densities due to annealing passivated oxygen vacancies, and the BM effect induced percolation conduction with increased carrier concentration due to Si doping, respectively. Thus, incorporating Si-based ZnO materials by ALD offers a viable candidate for superior device characteristics for energy-saving appliances.

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Prominent c-axis oriented Si-doped ZnO thin film prepared at low substrate temperature in RF magnetron sputtering and its UV sensing in p-Si/n-SZO heterojunction structures

Cited by 9 publications

References 60 publications

Reduced Work Function in Anatase ⟨101⟩ TiO₂ Films Self-Doped by O-Vacancy-Dependent Ti³⁺ Bonds Controlling the Photocatalytic Dye Degradation Performance

Reduced Work Function in Anatase ⟨101⟩ TiO₂ Films Self-Doped by O-Vacancy-Dependent Ti³⁺ Bonds Controlling the Photocatalytic Dye Degradation Performance

ZnO-Nanorod/Ag₂O-Nanoparticle/rGO-Nanosheet Heterostructures as Photocatalysts for Enhanced Degradation of Harmful Aqueous Phase Contaminants under Extended Visible Light Exposure

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

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Prominent c-axis oriented Si-doped ZnO thin film prepared at low substrate temperature in RF magnetron sputtering and its UV sensing in p-Si/n-SZO heterojunction structures

Cited by 9 publications

References 60 publications

Reduced Work Function in Anatase ⟨101⟩ TiO2 Films Self-Doped by O-Vacancy-Dependent Ti3+ Bonds Controlling the Photocatalytic Dye Degradation Performance

Reduced Work Function in Anatase ⟨101⟩ TiO2 Films Self-Doped by O-Vacancy-Dependent Ti3+ Bonds Controlling the Photocatalytic Dye Degradation Performance

ZnO-Nanorod/Ag2O-Nanoparticle/rGO-Nanosheet Heterostructures as Photocatalysts for Enhanced Degradation of Harmful Aqueous Phase Contaminants under Extended Visible Light Exposure

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

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Reduced Work Function in Anatase ⟨101⟩ TiO₂ Films Self-Doped by O-Vacancy-Dependent Ti³⁺ Bonds Controlling the Photocatalytic Dye Degradation Performance

Reduced Work Function in Anatase ⟨101⟩ TiO₂ Films Self-Doped by O-Vacancy-Dependent Ti³⁺ Bonds Controlling the Photocatalytic Dye Degradation Performance

ZnO-Nanorod/Ag₂O-Nanoparticle/rGO-Nanosheet Heterostructures as Photocatalysts for Enhanced Degradation of Harmful Aqueous Phase Contaminants under Extended Visible Light Exposure