volume 32, issue 21, P1558-1564 1992
DOI: 10.1002/pen.760322103
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Abstract: Abstract Three positive working Si‐CARL resists for bilayer applications with oxygen‐RIE pattern transfer were investigated, and their lithographic performance at deep‐UV exposure was compared. With all three we obtained good focus latitudes for 0.35 μm lines and spaces ranging from 1.6 to 2.2 μm exposed with an 0.37 NA KrF‐excimer laser stepper. The zero bias exposure dose required for resist R1, of the diazodiketone type, is relatively high (70 mJ/cm2), but R1 has the advantage of not suffering from linewid…

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