1987
DOI: 10.1016/0168-583x(87)90840-8
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Production MeV ion implanters for energies from 200 keV to 4 MeV

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Cited by 14 publications
(3 citation statements)
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“…Li 2 ions were produced using a cesium sputtering source (SNICS II) [22] and used in a photon-ion experimental apparatus described elsewhere [23]. The Li 2 ion beam was accelerated to 11 keV, and a beam of 20-150 nA reached the interaction region.…”
mentioning
confidence: 99%
“…Li 2 ions were produced using a cesium sputtering source (SNICS II) [22] and used in a photon-ion experimental apparatus described elsewhere [23]. The Li 2 ion beam was accelerated to 11 keV, and a beam of 20-150 nA reached the interaction region.…”
mentioning
confidence: 99%
“…We employed the ionizer-type Cs sputter ion source (SNICS II, National Electrostatics Corporation (NEC), Wisconsin, W.I., USA)) connected to a 3-MV tandem accelerator (9SDH-2, NEC) to produce negative C 60 ion beams based on conventional methods at the Takasaki Ion Accelerators for Advanced Radiation Application (TIARA) based at the National Institutes for Quantum and Radiological Science and Technology (QST-Takasaki, Takasaki Gunma, Japan). A schematic of the SNICS II ion source at TIARA is shown in Figure 1 [20]. Cs vapor is produced in the cesium oven and injected into the ionizer chamber.…”
Section: Conventional Methods (Cs Sputter)mentioning
confidence: 99%
“…In this scheme, the negative ions are decelerated from 15 + ε keV to the required low energies of ε keV by the sample potential. For our design, the source chosen for these negative ions was a SNICS II accelerator purchased from National Electrostatics Corp. [54][55][56][57] (with added differential pumping) to be integrated into a Tromp LEEM I [58]. It provided a beam of energy spread ∼65 eV FWHM, independent of mean energy [59].…”
Section: The Leem-ion Beam Tandemmentioning
confidence: 99%