DIRECT ION IMPLANTATION (eliminating the need for buffer layer growth and qualification) offers many advantages for monolithic amplifiers including lower cost and potentially higher yield and reproducibility. Microwave FETs using direct Si implants into Cr doped semi-insulating substrates have yielded typical power outputs between 0.52W/mm and 0.62W/mm at 8GHz as shown in Figure 1. These devices have been incorporated in single-stage monolithic lumped element amplifiers1 (Figure 2 ) to yield 6dB gain over 1OY…
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