Processing and integration of graphene in a 200 mm wafer Si technology environment

Reliable metal–graphene contact formation process flows in a CMOS-compatible environment

“…PECVD has the advantage of gas phase reactions, which makes it independent from contact catalysis at the surface of graphene. Low RF power is needed to avoid damage to the sp 2 network of graphene 32 and Raman spectra, taken before and aer deposition, showed no inuence of SiN deposition on graphene as extensively discussed by Lisker et al 17 The high reproducibility, the across-wafer and wafer-to-wafer uniformity of thickness, and the low impact of its deposition as revealed by Raman spectra made this process the standard graphene passivation process at IHP.…”

“…The transfer is carried out in a NaOH electrolyte solution where the PMMA/graphene/Ge/Si acts as cathode and graphite plate as anode. Following the transfer, a thermal treatment (annealing at 135 • C in N 2 and NH 3 atmosphere) for water elimination was implemented and chemical processing in acetone was performed for PMMA removal 17 .…”

“…Exploiting CVD-grown graphene for electronic applications, requires a transfer process from the catalyst substrate used for synthesis to a dielectric substrate 16 . Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge that was already faced in a previous paper 17 . However, the performance of graphene-based devices is limited primarily by the large and highly varying contact resistance, R C , that occurs when graphene is brought into contact with a metal [18][19][20] .…”

“…16 Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge that was already faced in a previous paper. 17 However, the performance of graphene-based devices is limited primarily by the large and highly varying contact resistance, R C , that occurs when graphene is brought into contact with a metal. [18][19][20] The carrier injection from metal to graphene is strongly limited by the small density of states (DOS) near the Dirac point.…”

2D Materials Nanoelectronics: New Concepts, Fabrication, Characterization From Microwaves up to Optical Spectrum

“…On the other hand, processing and integration of graphene grown by CVD in a 200 mm wafer Si technology is now available at the pilot line level . Also graphene growth on SiC based on the thermal decomposition of Si atoms near the surface due to the different partial pressures of C and Si has advanced, and presently wafers up to 200 mm are available.…”