DOI: 10.1109/isscc.1981.1156234
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B. Penumalli

Abstract: AS WE ENTER the VLSI era the requirements for smaller geometries and finer lines will be increasingly demanding. As a result, incorporation of the lateral effects in the dcsign-development process becomes crucial. To meet these challenges a comprehensive two-dimensional process and device simulation capability will be needed. Although several two-dimensional device analysis prog r a m arc available, most of these do not incorporate realistic doping profiles due to a lack of process simulation capability in tw…

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