MRS Proc. 2001 DOI: 10.1557/proc-688-c7.8.1 View full text
S.B. Majumder, M. Jain, A. Martinez, R.S. Katiyar, E.R. Fachini, F.W. Van Keuls, F.A. Miranda, P.K. Sahoo, V.N. Kulkarni

Abstract: AbstractParaelectric BaxSr1−xTiO3 (BST) (x = 0.5 and 0.6) thin films are attractive candidates for the fabrication of various microwave dielectric devices including phase shifters, resonators, filters, oscillators etc. In the present work we have studied the effect of annealing temperature and ambient on the epitaxial quality, surface morphology, dielectric, and phase shifter characteristics of BST thin films deposited on LaAlO3 substrates. The epitaxial quality of the film was markedly improved as the anneali…

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