Process Dependence of Proton-Induced Degradation in GaN HEMTs

Roy, Tania; Zhang, En Xia; Puzyrev, Yevgeniy; Fleetwood, D.M.; Schrimpf, R.D.; Choi, B.K.; Hmelo, Anthony B.; Pantelides, Sokrates T.

doi:10.1109/tns.2010.2073720

Cited by 61 publications

(51 citation statements)

References 18 publications

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“…Both the NH -rich MBE and the MOCVD devices of Fig. 2 perform better in a proton environment than the NH -rich MBE devices of [12], which failed to function at a fluence of cm 1.8-MeV protons.…”

Section: A Threshold Voltage Shiftsmentioning

confidence: 89%

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

Puzyrev

Roy

Zhang

et al. 2011

IEEE Trans. Nucl. Sci.

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Threshold-voltage shifts and increases in 1=f noise are observed in proton-irradiated AlGaN/GaN high-electron-mobility transistors, indicating defect-mediated device degradation. Quantum mechanical calculations demonstrate that low-energy recoils caused by particle interactions with defect complexes are more likely to occur than atomic displacements in a defect-free region of the crystal. We identify the responsible defects and their precursors in the defect-mediated displacement mechanism. The electronic properties of these defects are consistent with the increases in threshold voltage and 1=f noise in proton irradiation experiments.Index Terms-1 noise, AlGaN/GaN, density functional theory (DFT), displacement damage, HEMT, proton.

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Section: A Threshold Voltage Shiftsmentioning

confidence: 89%

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

Puzyrev

Roy

Zhang

et al. 2011

IEEE Trans. Nucl. Sci.

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“…However, in material grown by MBE using NH 3 -rich conditions, there were differences noted in the rate of positive threshold voltage shift and transconductance of HEMTs upon 1.8 MeV proton irradiation. 30,35,36 The threshold voltage shifts were found to be the highest for N-rich MBE growth, considerably lower for Ga-rich MBE growth, and the lowest for NH 3 -MBE and MOCVD growth (both characterized by N-rich conditions and the abundance of hydrogen). In a comparison of HEMTs grown only by MBE under Ga-rich or ammonia -rich conditions, while there was no difference in pinch-off voltage change with proton fluence, 45 there were significant differences in transconductance as shown in Figure 10.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

269

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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“…Here the dominant hydrogenated defects are supposed to be C acceptors and nitrogen antisite donors (see also Refs. [229,333,334]). …”

Section: Radiation Effects In Gan-based Hemtsmentioning

confidence: 99%