2018
DOI: 10.1002/advs.201800242
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Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces

Abstract: Polar discontinuities occurring at interfaces between two materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such structures, a reconfiguration of the charge landscape sets in at the interface via chemical modifications, adsorbates, or charge transfer. In the latter case, one may expect a local electronic doping of one material: one example is the two‐dimensional electron liquid (2DEL) appearing i… Show more

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Cited by 13 publications
(20 citation statements)
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“…While there is general agreement that the sensitivity to doping is connected to an observed Lifshitz transition [5, 14-17] between a single occupied band at low density and multiple occupied bands at high density [6,[17][18][19][20][21][22][23][24], the mechanism by which this transition happens is not established.Density functional theory (DFT), while instrumental in establishing fundamental interface properties [25][26][27][28], finds electron densities that are an order of magnitude larger than the Lifshitz transition density n L ∼ 0.02-0.05 electrons per 2D unit cell, and cannot easily be tuned through the transition. Schrödinger-Poisson calculations, for which n 2D can be continuously tuned, persistently find multiple occupied bands even for n 2D n L [5,15,[29][30][31]. Indeed, we showed previously that, because of STO is close to a ferroelectric (FE) quantum critical point [32], electrons become deconfined from an ideal interface as n 2D → 0, and form a dilute quasi-threedimensional (quasi-3D) gas extending far into the STO substrate [33].…”
mentioning
confidence: 99%
“…While there is general agreement that the sensitivity to doping is connected to an observed Lifshitz transition [5, 14-17] between a single occupied band at low density and multiple occupied bands at high density [6,[17][18][19][20][21][22][23][24], the mechanism by which this transition happens is not established.Density functional theory (DFT), while instrumental in establishing fundamental interface properties [25][26][27][28], finds electron densities that are an order of magnitude larger than the Lifshitz transition density n L ∼ 0.02-0.05 electrons per 2D unit cell, and cannot easily be tuned through the transition. Schrödinger-Poisson calculations, for which n 2D can be continuously tuned, persistently find multiple occupied bands even for n 2D n L [5,15,[29][30][31]. Indeed, we showed previously that, because of STO is close to a ferroelectric (FE) quantum critical point [32], electrons become deconfined from an ideal interface as n 2D → 0, and form a dilute quasi-threedimensional (quasi-3D) gas extending far into the STO substrate [33].…”
mentioning
confidence: 99%
“…The most direct comparison can be made to other recent gating experiments (55,113,129,132,173,204,240), with which our experimental results and conclusions are in good agreement. In parallel with and following the publication of Chapter 4, the redistribution of carriers among bands above the d xz,yz Lifshitz transition has been quite firmly established, and seems to be a universal effect in SrTiO 3 -based heterostructures (132,204,240).…”
Section: Parallel Developmentssupporting
confidence: 77%
“…Center-of-mass (nm) and even on superconductivity (113). We observe that the COM stays fairly constant with topgating, whereas with backgating it increases by about a factor of 3 over the gate voltage range studied.…”
Section: Electrostatic Tuning Of the Potential Wellmentioning
confidence: 75%
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