Pressure Engineering for Extending Spectral Response Range and Enhancing Photoelectric Properties of Iodine

Abstract

Constantly exploring and improving the photoelectric properties of functional materials is of paramount importance for the development of the optoelectronics industry. Herein, a new strategy to extend the spectral response range and enhance the photoelectric properties of functional materials using high pressure is presented. In addition, the successful application of this strategy to the regulation of the photoelectric properties of 2D layered semiconductor iodine is reported. The maximum photocurrent is four orders of magnitude higher than that measured under initial pressure, with visible‐light illumination. Impressively, the light‐response range of iodine is successfully extended to the near‐infrared (1064 nm) with the application of pressure, and the photoresponse properties are also significantly enhanced with compression. These dramatically enhanced photoelectric activities are attributed to charge delocalization as well as an increased charge density in the regions between parallel molecules, which occur as a result of pressure‐induced charge transfer in the iodine molecules. These findings can be extended to guide the modification of the spectral response range and photoelectric properties of other functional materials.

Rewritable Pressure-Driven n–p Conduction Switching in Marcasite-Type CrSb2

“…At room temperature, the narrow-gap semiconductor CrSb 2 exhibits excellent photocurrent responses. In addition to the measurements of thermoelectric power and Hall coefficient, photocurrent measurements are also useful tools for probing the type and density of carriers under HP. ,− At initial pressure, the sample shows n -type conductivity, consistent with the reported results of thermoelectric power and Hall resistance measurements. ,, At low pressures, the photocurrent responses are slightly enhanced by applying pressure. Upon increase in the pressure to 11.8 GPa, the direction of photocurrent switches, indicating that the carrier type changes from electrons to holes, that is an n – p switching, upon the structural phase transition.…”

Enhanced Structural Stability and Pressure‐Induced Photoconductivity in Two‐Dimensional Hybrid Perovskite (C6H5CH2NH3)2CuBr4

“…To investigate the structural evolution at high pressures, we first carried out in situ X-ray diffraction (XRD) measurement on a (PMA) 2 CuBr 4 single crystal by a diffractometer with wavelength of 0.71 Å in a standard diamond anvil cell (DAC). [21][22][23][24][25][26][27][28][29][30][31][32][33][34] High-quality rhenium (pre-indented into � 25 μm in thickness) and ruby balls (less than 10 μm in diameters) were employed as gasket and pressure calibration, respectively. Figure 1a shows the obtained XRD patterns of the sample at pressures up to 30 GPa, which can be divided into three stages.…”

Pressure-induced bandgap engineering and photoresponse enhancement of wurtzite CuInS2 nanocrystals

“…Up to now, pressure-based materials engineering has motivated and strengthened the photoelectrical performances of semiconductive halide perovskites, iodide, sulfides and oxides. 28–35 For example, the perovskite Cs 2 PbI 2 Cl 2 achieved significant photocurrent enhancement at high pressures to regulate the excitonic features. 28 The pressure-treated CH 3 NH 3 SnI 3 exhibited significantly higher photocurrent than its original phase.…”