Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces

Ohnishi, T.; Shibuya, Keisuke; Lippmaa, Mikk; Kobayashi, Daisuke; Kumigashira, Hiroshi; Oshima, Masaharu; Koinuma, Hideomi

doi:10.1063/1.1771461

Cited by 127 publications

(83 citation statements)

References 18 publications

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“…thick STO film. Such an annealing promotes the migration of surface species to the step edges, 32,33 and is routinely used as a complementary step after the buffered HF (BHF) etching to obtain the atomically flat TiO 2 termination with sharp unit-cell step edges. Since a long high-temperature anneal may also promote SrO segregation on the STO surface, 34 we keep our annealing time below 2 h. Figures 3(g) and 3(h) illustrate the topographic and friction images after the annealing treatment.…”

Section: -3mentioning

confidence: 99%

Fabricating superconducting interfaces between artificially grown LaAlO3 and SrTiO3 thin films

Li¹,

Gariglio²,

Cancellieri³

et al. 2014

APL Materials

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Realization of a fully metallic two-dimensional electron gas at the interface between artificially-grown LaAlO 3 and SrTiO 3 thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially-grown LaAlO 3 and SrTiO 3 thin films. Our results highlight the importance of two factors-the growth temperature and the SrTiO 3 termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially-grown LaAlO 3 /SrTiO 3 interface is due to the nanoscale SrO segregation occurring on the SrTiO 3 film surface during the growth and the associated defects in the SrTiO 3 film. By adopting an extremely high SrTiO 3 growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO 3 layers and artificially-grown SrTiO 3 thin films. This study paves the way to the realization of functional LaAlO 3 /SrTiO 3 superlattices and/or artificial LaAlO 3 /SrTiO 3 interfaces on other substrates.

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Section: -3mentioning

confidence: 99%

Fabricating superconducting interfaces between artificially grown LaAlO3 and SrTiO3 thin films

Li¹,

Gariglio²,

Cancellieri³

et al. 2014

APL Materials

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show abstract

“…The perfect nature of the substrate is aimed experimentally, through appropriate chemical preparations (see for example [114,115] and references therein for SrTiO 3 ), as it was showed that a vicinal substrate could be used to control the (poly)domain structure [116].…”

Section: Limitationsmentioning

confidence: 99%

Strain on ferroelectric thin films

Janolin

2009

J Mater Sci

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Strain engineering aims to take advantage of the stress field imposed by substrates on thin films. It requires an understanding of the consequences of stress fields on the physical properties of the deposited materials. This is achieved in ferroelectric thin films through the use of misfit-strain phase diagrams that show the stability regions for the possible phases. These encompass bulk phases as well as new ones exhibiting symmetries that are not present in the bulk. For the solid solution lead zirconate-lead titanate, Pb(Zr 1-x Ti x )O 3 , monoclinic phases found in the bulk morphotropic phase boundary region and associated to concentrations exhibiting the highest properties can be stabilized on a wider range of composition in thin films. In addition, phases of lower symmetry can be stabilized through the use of anisotropic biaxial stress fields, generated by orthorhombic substrates for example. Another crucial aspect of the influence of biaxial stress fields is the generation of domain structures. Theoretical tools as well as experimental verifications have provided much insight on the underlying physics. We, therefore, present here an overview of the influence of both iso-and anisotropic biaxial stress fields on the structures and properties of ferroelectric thin films exemplified on Pb(Zr 1-x Ti x )O 3 .

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“…15 In this scenario, the electric field effect results suggest that the charge profile at the same density can be different. On the other hand, if interface perfection is modified by the growth temperature, 41 then the same charge profile would generate a different electronic mobility.…”

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confidence: 99%

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Fête

Cancellieri

et al. 2015

Applied Physics Letters

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We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈10 000 cm2 V−1 s−1) and the lowest sheet carrier density (≈5×1012 cm−2). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×1013 cm−2 and mobilities of ≈1000 cm2 V−1 s−1 at 4 K. Reducing their carrier density by field effect to 8×1012 cm−2 lowers their mobilities to ≈50 cm2 V−1 s−1 bringing the conductance to the weak-localization regime.

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Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces

Cited by 127 publications

References 18 publications

Fabricating superconducting interfaces between artificially grown LaAlO3 and SrTiO3 thin films

Fabricating superconducting interfaces between artificially grown LaAlO3 and SrTiO3 thin films

Strain on ferroelectric thin films

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

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