Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation

Abstract

Lead zirconate titanate thin films have been successfully fabricated by reactive evaporation. Elemental Pb, Zr, and Ti were evaporated in ozone-oxygen mixture ambient. Excellent controls of uniformity of thickness and composition were achieved over a large area (within ±2% on 4-inch wafer). The electrical properties were examined as a function of Pb content in the films. High dielectric constant (ε∼1000) and low leakage current ( 1.7×10-7 A/cm2) were realized for the film with stoichiometric composition.

Role of ozone in reactive coevaporation of lead zirconate titanate thin films

“…5 The elemental lead was evaporated from a Knudsen cell, and the zirconium and titanium were evaporated from electron beam guns. 5 The elemental lead was evaporated from a Knudsen cell, and the zirconium and titanium were evaporated from electron beam guns.…”

Fields of Ozone Applications

“…The elements Pb, Zr, and Ti are evaporated in ozone-oxygen mixture. The films obtained have equal thickness and composition per large surface (in the range of ±2 % from the 4-inch support) [182].…”

Cycles on an Abelian variety without complex multiplication andl-adic representations

“…[1][2][3] Establishment of technology for the formation of ferroelectric capacitors is a key factor in the fabrication of FeRAM devices. Some of the techniques employed include sputtering, [4][5][6] ion-beam deposition, 7) reactive evaporation, 8) laser ablation, 9) sol-gel processing 10) and chemical vapor deposition. 11) In consideration of the integration of PZT thin films in Si ULSI processes, the process temperatures during the formation of ferroelectric PZT capacitors should be kept as low as possible, primarily to suppress in-diffusion of the constituent Pb atoms into the Si substrate and oxidation of the barrier metals between the bottom electrodes and storage-node plugs.…”