High photoelectronic response with a broad spectral range in photoelectric materials is of great importance for photovoltaic and photocatalytic applications. However, the existing photoelectric materials, such as TiO 2 and α-Fe 2 O 3 , exhibit only high photoelectronic response or only broad spectral response because of the wide band gap limitation of light absorbance or low photogenerated charge separation efficiency. Here, we report NaBiO 3 •2H 2 O annealed at a given temperature to form NaBiO 3 • 2H 2 O/NaBiO 3 •xH 2 O heterostructures, which efficiently drives the photogenerated charge separation in a broad spectral range. The best performance of the wide photoelectronic response and high surface photovoltage was obtained in the sample annealed at 130 °C. The high surface photovoltage with a wide spectral range is attributed to the band gap engineering of NaBiO 3 •2H 2 O/NaBiO 3 •xH 2 O heterostructures for efficient photogenerated charge separation. These findings regarding the use of optimized NaBiO 3 • 2H 2 O/NaBiO 3 •xH 2 O heterostructures suggest that fine-tuning the heterostructure of the photoelectric materials is an effective approach for improving the photoelectrical performance in optoelectronic applications.