Preparation and properties of thin ZnS:Cu films phosphors

Kryshtab, T.; Khomchenko, V. S.; Andraca-Adame, J. A.; Zavyalova, L. V.; Roshchina, N. N.; Rodionov, V. N.; Khachatryan, V. B.

doi:10.1016/j.tsf.2005.12.284

Cited by 28 publications

(15 citation statements)

References 4 publications

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“…The EL spectra show the emission band at around 460-500 nm, which corroborates the presence of the ZnS:Cu,Cl phosphor. The ZnS:Cu,Cl EL is having hetero-junction that is comprised of n-type semiconductor ZnS and p-type Cu x S [15]. When the ZnS lattice is activated with Cu (activator) and Cl (co-activator), donor (co-activator)-acceptor (activator) pairs are formed.…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

The characteristics of inorganic electroluminescent devices with an amorphous diamond film as cathode material

Wang

Sung

2009

Thin Solid Films

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Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

The characteristics of inorganic electroluminescent devices with an amorphous diamond film as cathode material

Wang

Sung

2009

Thin Solid Films

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“…The light-emitting phosphor material had been developed by researchers such as ZnS:Cu, ZnS:Cu,Cl, ZnS:Mn, and another phosphor material [17][18][19][20][21][22][23]. The researchers had researched on EL devices which can explain the following literatures.…”

Section: Introductionmentioning

confidence: 99%

An Analysis of ZnS:Cu Phosphor Layer Thickness Influence on Electroluminescence Device Performances

Chansri

Arunrungrusmi

Yuji

et al. 2017

International Journal of Photoenergy

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Electroluminescence (EL) device is a new technology; its thickness is within micrometer range which can bend more easily and emit light. However, the thickness of ZnS:Cu phosphor layer may affect the light intensity, so we have analyzed the thickness of ZnS:Cu phosphor layer on EL device. The EL devices consist of ITO:PET/ZnS:Cu phosphor/insulator (BaTiO 3 )/Ag electrode. The EL devices were fabricated in changing thickness 10 μm, 30 μm, and 50 μm. At 100 V 400 Hz, the luminance of EL devices was 51.22 cd/m 2 for thickness 30 μm more than that of 45.78 cd/m 2 (thickness: 10 μm) and 42.58 cd/m 2 (thickness: 50 μm). However, the peak light intensity was achieved at wavelength of 507 nm which was not influenced by the thickness of the ZnS:Cu phosphor. The use of the ZnS:Cu phosphor layer at thickness 30 μm in the EL device significantly improves the luminescence performance.

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“…The doped ZnS thin films have been developed by material research communities by using various techniques such as spray pyrolysis, chemical routes, conventional solid state reaction method, and electron beam evaporation . Table presents a full survey of Cu‐doped ZnS (Cu/ZnS) prepared by aforesaid techniques . It shows preparation of Cu/ZnS films with various copper concentrations along with substrate temperatures, crystal structures, and their optical properties.…”

Section: Introductionmentioning

confidence: 99%

Studies of Cu-doped ZnS thin films prepared by sputtering technique

Sreedhar

Reddy

Bera

et al. 2016

Surf. Interface Anal.

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Radio frequency magnetron sputtering technique has been used to deposit Cu‐doped ZnS thin films on glass and n‐type Si(100) substrates at room temperature. Crystalline structure, surface morphology, and elemental oxidation states have been studied by X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy. Ultraviolet–visible spectroscopy has been employed to measure the transmittance, reflectance, and absorbance properties of coated films. The deposited thin films crystallize in zinc blende or sphalerite phases as proved by X‐ray diffraction analysis. The intensity of diffraction peaks decreases with increasing the dopant concentrations. The predominant diffraction peak related to (111) plane of ZnS is observed at 28.52° along with other peaks. The peak positions are shifted to higher angles with an increase of Cu concentrations. X‐ray photoelectron spectroscopy studies show that Cu is present in +1 oxidation state. Transmittance, reflectance, and absorbance properties of the deposited films have a slight variation with dopant concentrations. Copyright © 2016 John Wiley & Sons, Ltd.

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Preparation and properties of thin ZnS:Cu films phosphors

Cited by 28 publications

References 4 publications

The characteristics of inorganic electroluminescent devices with an amorphous diamond film as cathode material

The characteristics of inorganic electroluminescent devices with an amorphous diamond film as cathode material

An Analysis of ZnS:Cu Phosphor Layer Thickness Influence on Electroluminescence Device Performances

Studies of Cu-doped ZnS thin films prepared by sputtering technique

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